用于ICF实验的SiC薄膜的制备及性能  

Preparation and Properties of Silicon Carbide Film for ICF Experiment

作　　者：李子曦 黄景林[2] 谢春平 杜凯[2] 易勇[1] LI Zixi;HUANG Jinglin;XIE Chunping;DU Kai;YI Yong(School of Materials and Chemistry,Southwest University of Science and Technology,Mianyang 621010,Sichuan,China;Research Center of Laser Fusion,China Academy of Engineering Physics,Mianyang 621900,Sichuan,China)

机构地区：[1]西南科技大学材料与化学学院,四川绵阳621010 [2]中国工程物理研究院激光聚变研究中心,四川绵阳621900

出　　处：《西南科技大学学报》2022年第4期1-8,共8页Journal of Southwest University of Science and Technology

基　　金：国家自然科学基金(12104426);中国工程物理研究院激光聚变研究中心青年人才基金(RCFCZ3-2019-9)。

摘　　要：以四甲基硅烷作为单一反应前驱体气源,采用等离子体增强化学气相沉积法在Si晶片(100)上生长SiC薄膜,研究了电极距离对薄膜微观结构和性能的影响。结果表明:在实验设定的5~9 cm电极距离下所制备的薄膜成分以Si-C键为主,具有极低的表面粗糙度(1.30~2.44 nm)和较高的硬度与弹性模量比(H/E值为0.134~0.154);电极距离越短,薄膜的密度越高。实验结果为SiC薄膜在惯性约束聚变实验中的应用奠定了基础。Using the tetramethylsilane as a single precursor gas and plasma enhanced chemical vapor deposition method,SiC films were planted on Si wafer(100).The effect of electrode distance on the microstructure and properties of the films was investigated.The results show that at the electrode distance of 5-9 cm,the composition of the prepared films is mainly Si-C bond with extremely low surface roughness(1.30-2.44 nm)and relatively high ratio of H/E(0.134-0.154).And the shorter the electrode distance,the higher the density of the film.The experimental results lays a foundation for the application of SiC films in ICF experiment.

关 键 词：SIC薄膜 电极距离 单一反应气源 等离子体增强化学气相沉积 

分 类 号：O469[理学—凝聚态物理]