半导体脉冲功率开关器件综述  

Review on Semiconductor Pulsed Power Switching Devices

作　　者：梁琳[1] 颜小雪 黄鑫远 卿正恒 杨泽伟 尚海 LIANG Lin;YAN Xiaoxue;HUANG Xinyuan;QING Zhengheng;YANG Zewei;SHANG Hai(State Key Laboratory of Advanced Electromagnetic Engineering and Technology(School of Electrical and Electronic Engineering,Huazhong University of Science and Technology),Wuhan 430074,Hubei Province,China)

机构地区：[1]强电磁工程与新技术国家重点实验室(华中科技大学电气与电子工程学院),湖北省武汉市430074

出　　处：《中国电机工程学报》2022年第23期8631-8651,共21页Proceedings of the CSEE

基　　金：国家自然科学基金项目(51877092,51377069);装备预研重点实验室基金(6142605180104)。

摘　　要：该文对应用于脉冲功率领域的特种半导体开关器件进行综述,具体包括反向开关晶体管(reversely switched dynistor,RSD)、漂移阶跃恢复二极管(drift step recovery diode,DSRD)和快速离化晶体管(fast ionization dynistor,FID)。上述半导体开关器件从时间尺度上分别对应微秒级、纳秒级和皮秒级,研制材料包括硅基(Si)和碳化硅基(SiC)。该文介绍相关器件的工作机理、关键技术和应用情况,以及部分研究进展,并对未来的发展趋势进行展望。The special types of semiconductor switching devices applied in the pulsed power area were reviewed in this paper,including reversely switched dynistor(RSD),drift step recovery diode(DSRD)and fast ionization dynistor(FID).They are microsecond,nanosecond and picosecond range in time scale,respectively,and Si-based and SiC-based in material.The operation principle,key technology and application of the devices as well as some research progress were introduced,and the future development trend was prospected.

关 键 词：半导体开关 脉冲功率 反向开关晶体管 漂移阶跃恢复二极管 快速离化晶体管 

分 类 号：TM564[电气工程—电器]