基于负载牵引的S波段130 W硅LDMOS功率放大器研制  

Design of an S-Band 130 W Silicon LDMOS Power Amplifier Based on Load-Pull

作　　者：鞠久贵 成爱强 JU Jiugui;CHENG Aiqiang(China Electronics Technology Group Corporation No.55 Research Institute,Nanjing 210016,China)

机构地区：[1]中国电子科技集团公司第五十五研究所,南京210016

出　　处：《电子与封装》2023年第1期121-125,共5页Electronics & Packaging

摘　　要：研制了具有高频、高增益特性的硅LDMOS芯片,利用切比雪夫变换电路设计了5Ω及10Ω的2套负载牵引夹具。采用大功率负载牵引测试技术进行了阻抗提取,完成了功率管内匹配及预匹配电路的设计,设计出一款工作频带为2.7~3.1 GHz的LDMOS宽带功率放大器。测试结果表明,放大器在32 V工作电压、100μs脉宽、10%占空比的工作条件下,输出功率大于130 W,增益超过12.5 dB,漏极效率达到46%以上。A kind of silicon LDMOS chip with high frequency and high gain is developed.Two sets of load-pull clamps of 5Ωand 10Ωare designed through Chebyshev transform circuits.The impedance is extracted by the high-power load-pull test technology,the design of in-tube matching circuit and pre-matching circuit is completed,and a wide band LDMOS power amplifier of 2.7-3.1 GHz is designed.The test results show that the amplifier achieves the output power more than 130 W,the gain more than 12.5 dB,and the drain efficiency more than 46%under 32 V operating voltage,100μs pulse width and 10%duty cycle.

关 键 词：LDMOS S波段 负载牵引 预匹配 ADS仿真 

分 类 号：TN722[电子电信—电路与系统]