基于玻璃钝化结构的梁式引线肖特基T型对管芯片的研制  

The development of T-type beam lead Schottky diode series pairs based on glass passivation

作　　者：汤寅 熊威 王霄[1] 杨勇 TANG Yin;XIONG Wei;WANG Xiao;YANG Yong(Nanjing Electronic Devices Institute,Nanjing 210016,China)

机构地区：[1]南京电子器件研究所,江苏南京210016

出　　处：《电子元件与材料》2022年第12期1312-1317,共6页Electronic Components And Materials

摘　　要：基于玻璃钝化结构的梁式引线集成器件机械强度高、寄生参数小,在高频检波、混频电路中有重要应用。通过梯度式腐蚀法获得了V型玻璃槽结构,采用低应力玻璃钝化工艺实现槽内覆盖填充,并结合低势垒蒸发技术实现了高一致性的玻璃钝化结构Si基梁式引线肖特基T型对管芯片的研制。研制的芯片正向压降V_(F)≤350 mV,结电容C_(jo)≤0.1 pF,击穿电压V_(BR)≥4 V,动态电阻R_(D)≤20Ω,电压灵敏度S_(v)≥17 mV/μW,对管芯片的关键电参数偏差小于5%。该技术途径可应用于梁式引线四管堆等多种集成结构形式,可有效促进电路组件的小型化发展。Beam-lead integrated devices based on glass passivated structure have high mechanical strength and small parasitic parameters,which has tremendous application in high frequency detection and mixing circuits.thanks to the V-shaped glass grooves was achieved with gradient etching,the low-stress glass passivation process was applied to achieve ingroove filling,together with low-barrier evaporation technology,the high-consistency Si T-type beam lead Schottky diode based on glass passivated structure was developed.The test results show that the developed chip can achieve positive pressure drop V_(F)≤320 mV,junction capacity C_(jo)≤0.1 p_(F),breakdown voltage V_(BR)≥4 V,dynamic resistance R_(D)≤20Ω,voltage sensitivity S_(v)≥17 mV/μW,and the key electrical parameter deviation of the series pairs is less than 5%.This technique can be applied to many kinds of integrated devices,such as beam-lead ring quad,which can effectively promote the miniaturization of the circuit components.

关 键 词：梁式引线 玻璃钝化 低势垒 肖特基二极管 检波 

分 类 号：TN313.8[电子电信—物理电子学]