离子束刻蚀改善光通信滤光膜均匀性的研究  

Research on Improving the Uniformity of Optical Communication Filter Film by Ion Beam Etching

作　　者：张静[1] 刘海成 付秀华[1,2] 王升耆 杨飞[4] ZHANG Jing;LIU Haicheng;FU Xiuhua;WANG Shengqi;YANG Fei(College of Optoelectronic Engineering,Changchun University of Science and Technology,Changchun 130022,China;Zhongshan Research Institute,Changchun University of Science and Technology,Zhongshan,Guangdong 528436,China;Guang Chi Technology(Shanghai)Co.,Ltd.,Shanghai 200444,China;Changchun Institute of Optics,Fine Mechanics and Physics,Chinese Academy of Sciences,Changchun 130033,China)

机构地区：[1]长春理工大学光电工程学院,长春130022 [2]长春理工大学中山研究院,广东中山528436 [3]光驰科技(上海)有限公司,上海200444 [4]中国科学院长春光学精密机械与物理研究所,长春130033

出　　处：《光子学报》2022年第12期249-261,共13页Acta Photonica Sinica

基　　金：吉林省科技发展计划国际科技合作项目(No.20210402065GH);中国科学院青年创新促进会优秀会员(No.Y202053);中国科学院国际伙伴计划(No.181722KYSB20200001);国家自然科学基金(No.11973040)。

摘　　要：为了提高窄带滤光膜的有效镀膜面积,用电子束与离子辅助沉积技术制备了大尺寸光通信滤光膜。利用离子束刻蚀原理修正膜层均匀性,研究了离子源参数对Ta_(2)O_(5)和SiO_(2)两种材料膜层均匀性的影响;同时通过Macleod膜系设计软件对实验结果进行反演分析,改善了滤光膜通带波纹。最终制备的窄带滤光膜满足光通信技术要求,有效镀膜面积可达2123 mm^(2)。The demand for dense wavelength division complex narrowband filter film for 5G optical communication is increasing,and the research on DWDM filter film is more mature at home and abroad,but most of them adopt sputtering to form film,and there are fewer reports on the preparation of DWDM filter film by thermal evaporation,which has research significance because the deposition rate of film material is large and the time used is relatively small.However,due to the large deposition rate,the accuracy and sensitivity of the film thickness monitoring system is more demanding.In addition,the DWDM film system is highly sensitive,and if the traditional method of adjusting film thickness uniformity by means of correction plates is used,the correction plates can be deformed due to the long coating time and high temperature in the vacuum chamber,which makes it difficult to meet the control accuracy.Therefore,in this paper,when preparing DWDM filter film by thermal evaporation,the ion beam etching principle is used to correct the film uniformity in order to improve the effective coating area.The feasibility of using ion source etching to adjust the film uniformity is firstly verified by comparing the film thickness uniformity with and without ion source-assisted deposition.Based on this,the effects of ion source acceleration voltage,ion source voltage and ion source current on the film uniformity of Ta_(2)O_(5)and SiO_(2)materials are further investigated by using the control variable method.Among them,the film layer uniformity gradually becomes better as the ion source acceleration voltage and ion source voltage increase,and the film layer uniformity first becomes better and then worse as the ion source current increases.Compared with the change of ion source current value,the change of ion source acceleration voltage has more influence on the membrane uniformity.By analyzing the experimental data of the monolayer film,it is determined that the monolayer film uniformity is better when the ion source acceleration voltage is 75

关 键 词：光学薄膜 光通信 离子束刻蚀 膜厚均匀性 密集波分复用 

分 类 号：O484[理学—固体物理]