基于AlGaN/GaN HEMT结构的ZnO纳米线感光栅极光电探测器  

ZnO Nanowires Photosensitive Grid Photodetector Based on AlGaN/GaN HEMT Structure

作　　者：朱彦旭[1] 李建伟[1] 李锜轩 宋潇萌 谭张杨 李晋恒 王晓冬 ZHU Yanxu;LI Jianwei;LI Qixuan;SONG Xiaomeng;TAN Zhangyang;LI Jinheng;WANG Xiaodong(Key Laboratory of Opto-electronics Technology,Ministry of Education,Beijing University of Technology,Beijing 100124,China;Institute of Software,Chinese Academy of Science,Beijing 100190,China;School of Police Equipment Technology,Renmin Police University,Langfang 102308,Hebei,China)

机构地区：[1]北京工业大学光电子技术教育部重点实验室,北京100124 [2]中国科学院软件研究所,北京100190 [3]中国人民警察大学警务装备技术学院,河北廊坊102308

出　　处：《北京工业大学学报》2023年第2期188-196,共9页Journal of Beijing University of Technology

基　　金：国家重点研发计划资助项目(2017YFB0402803);北京市自然科学基金资助项目(4182011)。

摘　　要：在传统的采用ZnO薄膜的AlGaN/GaN高电子迁移率晶体管(high electron mobility transistor,HEMT)光电探测器件中,存在光吸收、光电转换效率低,光电流小等诸多局限.为改善上述问题,基于AlGaN/GaN HEMT结构,提出并成功制备了一种ZnO纳米线感光栅极光电探测器.实验中首先通过水热法将ZnO纳米线成功制备到Si衬底材料及AlGaN/GaN HEMT衬底材料上,并利用X射线衍射(X-ray diffraction,XRD)仪、扫描电子显微镜(scanning electron microscope,SEM)、光致发光(photo luminescence,PL)光谱仪等仪器进行了一系列测试.结果表明,生长在AlGaN/GaN HEMT衬底材料上的ZnO纳米线具有更低的缺陷密度、更好的结晶度和更优异的光电特性.然后,将ZnO纳米线成功集成到AlGaN/GaN HEMT器件的栅极上,制备出具有ZnO纳米线感光栅极的AlGaN/GaN HEMT紫外光电探测器.将实验中制备出的具有ZnO纳米线感光栅极的AlGaN/GaN HEMT器件与常规的AlGaN/GaN HEMT器件进行对比,发现具有ZnO纳米线的器件在紫外波段能达到1.15×104A/W的峰值响应度,相比常规结构的AlGaN/GaN HEMT,峰值响应度提升约2.85倍,并且制备的ZnO纳米线器件的响应时间和恢复时间缩短为τr=10 ms和τf=250 ms,提高了探测器的性能.In the conventional AlGaN/GaN high electron mobility transistor(AlGaN/GaN HEMT)photodetector with ZnO films,there are many limitations such as low light absorption efficiency,low photoelectric conversion efficiency and small photocurrent.To improve the above problems,a ZnO nanowire photosensitive gate photodetector based on AlGaN/GaN HEMT structure was proposed and successfully fabricated in this experiment.First,ZnO nanowires were successfully prepared on Si substrates and AlGaN/GaN high electron mobility transistor(HEMT)substrate materials by hydrothermal method.A series of tests were carried out by using X-ray diffractometer,scanning electron microscope(SEM),photo luminescence(PL)Spectrum and other instruments.It is found that the ZnO nanowires grown on the AlGaN/GaN HEMT substrate material has lower defect density,better crystallinity and better optoelectronic properties.Then,the ZnO nanowires were successfully integrated into the gate of the AlGaN/GaN HEMT device,and an AlGaN/GaN HEMT ultraviolet photodetector with a ZnO nanowire photosensitive gate was fabricated.Comparing the AlGaN/GaN HEMT device with ZnO nanowire photosensitive gate prepared in the experiment with the conventional AlGaN/GaN HEMT device,it is found that the device with ZnO nanowire can reach a peak value of 1.15×10~4 A/W in the ultraviolet band.The responsivity is about 2.85 times higher than that of the conventional AlGaN/GaN HEMT.The response time and recovery time of the prepared ZnO nanowire device are shortened toτr=10 ms andτf=250 ms,which significantly improves the performance of the detector.

关 键 词：水热法 紫外 ZNO纳米线 高电子迁移率晶体管(high electron mobility transistor HEMT) 探测器 响应度 

分 类 号：TN36[电子电信—物理电子学]