基于阱式阶梯电子阻挡层的深紫外激光二极管性能研究  

Performance of deep ultraviolet laser diode based on well-type ladder electron barrier

作　　者：魏士钦 王瑶[1] 王梦真 王芳[1] 刘俊杰 刘玉怀[1,2,3] WEI Shiqin;WANG Yao;WANG Mengzhen;WANG Fang;LIU Junjie;LIU Yuhuai(National Center for International Joint Research of Electronic Materials and Systems,School of Information Engineering,Zhengzhou University,Zhengzhou 450001,China;Zhengzhou Way Do Electronics Technology Co.Ltd.,Zhengzhou 450001,China;Industrial Technology Research Institute Co.Ltd.,Zhengzhou University,Zhengzhou 450001,China)

机构地区：[1]郑州大学信息工程学院电子材料与系统国际联合研究中心,河南郑州450001 [2]郑州唯独电子科技有限公司,河南郑州450001 [3]郑州大学产业技术研究院有限公司,河南郑州450001

出　　处：《量子电子学报》2023年第1期62-68,共7页Chinese Journal of Quantum Electronics

基　　金：国家重点研发计划(2016YFE0118400);宁波市“科技创新2025”重大专项(2019B10129)。

摘　　要：为有效降低深紫外激光二极管(DUV-LD)在有源区的电子泄露,提出了一种阱式阶梯电子阻挡层(EBL)结构。利用Crosslight软件对矩形、阶梯形和阱式阶梯形三种不同的结构分别进行了仿真研究,详细对比分析了三种结构器件的能带图、辐射复合率、电子空穴浓度、P−I以及V−I特性等,结果表明阱式阶梯EBL对电子的泄露抑制效果最好,从而使得器件的光学和电学性能得到优化。In order to effectively reduce the electron leakage of deep ultraviolet laser diode(DUV-LD)in the active region,a well-type ladder electron blocking layer(EBL)structure is proposed.Crosslight software is used to simulate three different structures of EBLs,namely,rectangle type,ladder type and well-type,respectively,and the energy band diagram,radiation recombination rate,electron hole concentration,P-I and V-I characteristics of the three structure devices are compared and analyzed in detail.It is found that the well-type ladder EBL has the best suppression effect on the leakage of electrons,leading to the improved optical and electrical properties of the DUV-LD device.

关 键 词：激光技术 深紫外激光二极管 ALGAN 阱式阶梯电子阻挡层 电子泄露 

分 类 号：O472[理学—半导体物理]