无偏角4H-SiC同质外延温场分布系数的仿真及实验研究  

Simulation and Experimental Study on Coefficient of Temperature Field Distribution for On-Axis 4H-SiC Homoepitaxial Growth

作　　者：汪久龙 赵思齐 李云凯 闫果果[1,3] 申占伟 赵万顺 王雷[1] 关敏[1,2,3] 刘兴昉[1,2,3] 孙国胜 曾一平[1,2,3] WANG Jiulong;ZHAO Siqi;LI Yunkai;YAN Guoguo;SHEN Zhanwei;ZHAO Wanshun;WANG Lei;GUAN Min;LIU Xingfang;SUN Guosheng;ZENG Yiping(Key Lab.of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,CHN;College of Materials Science and Opto-Electronic Technology,University of Chinese Academy of Sciences,Beijing 100049,CHN;Beijing Key Lab.of Low Dimensional Semiconductor Materials and Devices,Beijing 100083,CHN)

机构地区：[1]中国科学院半导体研究所中国科学院半导体材料科学重点实验室,北京100083 [2]中国科学院大学材料科学与光电技术学院,北京100049 [3]低维半导体材料与器件北京市重点实验室,北京100083

出　　处：《半导体光电》2022年第5期909-913,共5页Semiconductor Optoelectronics

基　　金：广东省重点研发计划项目(2021B0101300005);国家自然科学基金项目(12175236,62104222,61804149)。

摘　　要：采用化学气相沉积(CVD)方法进行碳化硅(4H-SiC)同质外延生长,生长过程中温场分布是决定外延层质量的关键因素。对CVD系统的温场分布进行了仿真研究,并采用无偏角4H-SiC衬底进行同质外延生长实验验证。结果表明,无偏角4H-SiC外延层中的3C-SiC多型体夹杂与生长室温场分布密切相关。实验数据验证了仿真结果,两者的温度分布具有高度一致性,这也证明了仿真数据的有效性。In the homoepitaxial growth of silicon carbide(4 H-SiC) by chemical vapor deposition(CVD), the distribution of its temperature field is crucial for the quality of the epitaxial layer. The CVD temperature field was simulated and experimentally verified using on-axis 4 H-SiC homogeneous epitaxy. It is found that the 3 C-SiC crystal polytype inclusions in the on-axis 4 H-SiC epitaxial layers are closely related to the temperature field distribution in the growth chamber. The results validate the simulation with a high degree of consistency in above two’s temperature distributions, which also verify the accuracy of the simulation data.

关 键 词：碳化硅 无偏角衬底 同质外延 温度场 

分 类 号：TN304[电子电信—物理电子学]