场助光电阴极研究进展  

Development of Field Assisted Photocathode

作　　者：岳江楠 李禹晴 陈鑫龙[2] 徐鹏霄[2] 邓文娟[1] 彭新村[1] 邹继军[1] YUE Jiangnan;LI Yuqing;CHEN Xinlong;XU Pengxiao;DENG Wenjuan;PENG Xincun;ZOU Jijun(State Key Laboratory of Nuclear Resources and Environment,School of Mechanical and Electronic Engineering,East China University of Technology,Nanchang 330013,CHN;The 55th Research Institute of China Electronics Technology Group Corporation,Nanjing 210016,CHN)

机构地区：[1]东华理工大学核技术应用教育部工程研究中心,南昌330013 [2]中国电子科技集团公司第五十五研究所,南京210016

出　　处：《光电子技术》2022年第4期248-253,266,共7页Optoelectronic Technology

基　　金：国家自然科学基金(11875012,61961001,62061001);江西省自然科学基金(20192ACBL20003,20181BAB202026,20202BAB202013);江西省“双千计划”项目(jxsq2019201053)。

摘　　要：对场助光电阴极的发展进行回顾,介绍了场助光电阴极的工作原理,系统总结了三种具有代表性的阴极结构,分别是InP/InGaAsP/InP、InP/InGaAs、InGaAs/InAsP/InP光电阴极。InP/InGaAsP/InP双异质结结构是场助光电阴极研究的热点,这种结构大多用于长波阈值达到1.3μm的场助光电阴极;InGaAs异质结结构相对于其他结构具有很高的灵敏度,响应时间快,有利于在条纹变像管中应用;InGaAs/InAsP/InP结构的光电阴极在InP和InGaAs之间提供一层InAsP渐变层,对延长波长阈值非常有利,通过分析不同结构的特点及应用,讨论了场助光电阴极的发展方向以及难点。The development of field-assisted photocathode was reviewed,and the working principle of field-assisted photocathode was introduced.Three representative cathode structures were summarized systematically,which were InP/InGaAsP/InP,InP/InGaAs and InGaAs/InAsP/InP photocathode.InP/InGaAsP/InP double heterojunction was a research highlight in field-assisted photocathode research,and this structure was mostly used in 1.3μm field-assisted photocathode;InGaAs heterojunction structure had high sensitivity and fast response time compared with other structures,which was conducive to the application of fringe image converter tube;the photocathode with InGaAs/InAsP/InP structure provided a graded InAsP layer between InP and InGaAs,which was very beneficial to prolong the wavelength threshold.By analyzing the characteristics and applications of different structures,the development direction and difficulties of field-assisted photocathodes were discussed.

关 键 词：场助光电阴极 转移电子光电阴极 铟镓砷 磷化铟 

分 类 号：TN362[电子电信—物理电子学]