电力系统用高电压快速恢复二极管坚固性优化  

Optimization of Robustness for High Voltage Fast Recovery Diodes Used in Power System

作　　者：和峰 刘钺杨 刘江 李翠 王耀华 晁武杰 金锐 魏晓光 HE Feng;LIU Yueyang;LIU Jiang;LI Cui;WANG Yaohua;CHAO Wujie;JIN Rui;WEI Xiaoguang(State Key Laboratory of Advanced Power Transmission Technology,Beijing,102211,CHN;Beijing Institute of Smart Energy,Beijing,102211,CHN;State Grid Fujian Electric Power Research Institute,Fuzhou,350000,CHN)

机构地区：[1]先进输电技术国家重点实验室,北京102211 [2]北京智慧能源研究院,北京102211 [3]国网福建省电力有限公司电力科学研究院,福州350000

出　　处：《固体电子学研究与进展》2022年第6期435-440,478,共7页Research & Progress of SSE

摘　　要：高压快恢复二极管芯片过渡区是反向恢复坚固性的薄弱点,一旦失效将影响电力装置稳定运行。提出了一种高阻型过渡区优化结构,通过建立三种模拟模型,研究了过渡区宽度和掺杂浓度对快恢复二极管反向恢复性能的影响。采用高阻型过渡区结构的快恢复二极管反向恢复安全工作区仿真极限值提高到电压为2900 V、电流为630 A、电流变化率为1600 A/μs。基于该设计制备的3300 V/1500 A FRD器件可通过电压为3200 V、电流为3000 A、电流变化率为8648 A/μs条件下的反向恢复测试,显著提高了FRD器件的反向恢复坚固性。The transition zone(TZ)of high voltage fast recovery diode(HV-FRD)is the weak point of reverse recovery robustness.Once the failure occur at this area will affect the stable operation of power devices.An optimization structure of high-resistance transition zone(HRTZ)was proposed in this paper.The effects of TZ width and doping concentration on reverse recovery performance of HV-FRDs were studied by establishing three simulation models.By using the HRTZ structure,the simulation RRSOA limit value of such FRD is increased to 2900 V,630 A and 1600 A/μs.Based on the simulation model,the prepared 3300 V FRD chips can pass the reverse recovery test at 3200 V,3000 A and 8648 A/μs after packaging,which greatly improves the reverse recovery robustness.

关 键 词：快恢复二极管 反向恢复 电流丝 坚固性 

分 类 号：TN304[电子电信—物理电子学]