背栅偏置对掩埋氧化层辐射感生陷阱电荷调控规律及机理  

Regulation and Mechanism of Back Gate Bias on Buried Oxide Radiation-induced Trap Charge

作　　者：王海洋[1,2] 郑齐文 崔江维[1,2] 李豫东 郭旗[1] WANG Haiyang;ZHENG Qiwen;CUI Jiangwei;LI Yudong;GUO qi(Key Laboratory of Functional Materials and Devices for Special Environments of CAS,Xinjiang Key Laboratory of Electric Information Materials and Devices,Xinjiang Technical Institute of Physics and Chemistry of CAS,Urumqi,830011,CHN;University of Chinese Academy of Sciences,Beijing,100049,CHN)

机构地区：[1]中国科学院特殊环境功能材料与器件重点实验室,新疆电子信息材料与器件重点实验室,中国科学院新疆理化技术研究所,乌鲁木齐830011 [2]中国科学院大学,北京100049

出　　处：《固体电子学研究与进展》2022年第6期449-455,共7页Research & Progress of SSE

基　　金：新疆维吾尔自治区自然科学基金资助项目(2021D01E06);国家自然科学基金资助项目(12075313);中国科学院青年创新促进会资助项目(2020430,2018473)。

摘　　要：研究了辐照过程中施加背栅偏置对掩埋氧化层(BOX)辐射感生陷阱电荷的调控规律及机理。测试了130 nm部分耗尽绝缘体上硅金属氧化物半导体场效应晶体管在不同背栅偏置条件下辐射损伤规律,试验结果显示辐照过程中施加正向背栅偏置可以显著增强辐射陷阱电荷产生,而施加负向背栅偏置并不能明显抑制氧化物陷阱电荷的产生,甚至在进一步提高负向偏置时会使氧化物陷阱电荷的数量上升。通过TCAD器件模拟仿真研究了背栅调控机理,研究结果表明:尽管负向背栅偏置可使辐射感生陷阱电荷远离沟道界面,但随着BOX层厚度减薄该区域电荷仍可导致器件电参数退化,且提高负向偏置电压可进一步增强陷阱电荷产生,加剧辐射损伤。The regulation and mechanism of the back gate bias on the buried oxide(BOX)radiation-induced trap charge were investigated in this paper.The radiation damage laws of 130 nm partially depleted silicon-on-insulator MOSFETs with different sizes under different back gate biases were tested.The test results show that applying a positive back-gate bias during the irradiation process can significantly enhance the generation of radiation trap charges,while applying a negative back-gate bias cannot significantly inhibit oxide trap charge generation,even a further increase in the negative bias will increase the number of oxide trap charges.Through TCAD device simulation,the mechanism of back gate regulation was studied.The results show that although the negative back gate bias can make the radiation-induced trap charge away from the channel surface,as the thickness of the BOX layer becomes thinner,the charge in this area can still cause the device degradation of electrical parameters,and increasing the negative bias voltage can further enhance the trapped charge generation and aggravate radiation damage.

关 键 词：绝缘体上硅 掩埋氧化物 背栅调控 总剂量辐照 

分 类 号：TN43[电子电信—微电子学与固体电子学]