掩埋异质结激光器的Mesa制备工艺  

Mesa Preparation Process for Buried Heterojunction

作　　者：张奇 武艳青 刘浩[1] 商庆杰[1] 宋洁晶[1] ZHANG Qi;WU Yanqing;LIU Hao;SHANG Qingjie;SONG Jiejing(The 13th Research Institute of CETC,Shijiazhuang 050051,China)

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《电子工艺技术》2023年第1期14-17,共4页Electronics Process Technology

摘　　要：掩埋异质结结构的半导体激光器具有阈值低、光束质量好的优点。台面(Mesa)制作是掩埋结激光器加工过程中的一步关键工艺,采用传统的全湿法腐蚀工艺制作台面,3英寸圆片内腐蚀深度和器件输出功率水平差异较大。而采用干法刻蚀加湿法腐蚀工艺技术,制备出的台面表面光滑、侧壁连续,腐蚀深度差异为6%,最终器件输出功率水平的差异仅为2%。利用该掩埋结技术制备的1 550 nm大功率激光器均匀性有了较大提升,900μm腔长单管的阈值电流约12 mA,300 mA工作电流时功率输出100 mW。Buried heterojunction semiconductor lasers have the advantages of low threshold and good beam quality. Mesa fabrication is one of the key processes in the process of buried junction lasers. Using the traditional wet etching process to make mesa, the difference of the corrosion depth and output power in the 3-inch wafer is very big. However, using the dry etching and wet corrosion to make mesa, the surface is smooth and the sidewall is continuous. The difference of the depth is 6%, and the difference of the device’s output power level is only 2%. The uniformity of 1 550 nm high-power laser fabricated by the buried junction technique is improved greatly, and the threshold current of 900 μm cavity single tube is about 12 mA, and the power output is 100 mW at 300 mA operating current.

关 键 词：MESA 掩埋结 干法刻蚀 均匀性 

分 类 号：TN405[电子电信—微电子学与固体电子学]