The authors would like to acknowledge the support of KAUST Baseline Fund BAS/1/1664-01-01,Transition Award in Semiconductors,Award No.FCC/1/5939,OpportunityFundURF/1/5557-01-01.
The size of InGaN micro-LEDs is continuously decreasing to meet the demands of various emerging applications,especially in tiny micro-displays such as ARVR.However,the conventional pixel definition based on plasma etc...
supported by the National Natural Science Foundation of China (Grant Nos. 12204321, 51961145304);Guangdong Basic and Applied Basic Research Foundation (Grant No. 2022B1515120040);Shenzhen Science and Technology Program (Grant Nos. RCBS20210609104540088, JCYJ20200109150608043, JCYJ20210324100600001, and JSGG20220831095802004);Shenzhen Key Laboratory of Superlubricity Technology (Grant No. ZDSYS20230626091701002)。
Structural superlubricity(SSL) refers to a state of ultralow friction and zero wear when two solid surfaces slide against each other. Recent investigations have identified amorphous carbon at the edge of the graphite ...
The discipline of plant immunity has developed rapidly in the 21st century and is marked by substantial progress toward understanding the molecular mechanisms of plant immune recognition and the pathogenicity of micro...
GaN-based vertical P-i-N diode with mesa edge terminal structure due to electric field crowding effect, the breakdown voltage of the device is significantly reduced. This work investigates three terminal structures, i...
the financial backing provided by the Universidad Industrial de Santander through project 2534 “Estudio Integral del Agua en la Mesa de Los Santos”。
This work applies stress tensors inversions and quantification of fracture patterns along the Mesa de Los Santos, in the Eastern Cordillera of Colombia, to better understand the potential fluid flow. It thus contribut...
financially supported by the Scientific and Technology Project of State Grid Corporation of China,Research on Dry Etching Forming Technology of Silicon Carbide Device,Project No.5500-202158437A-0-0-00.
The comparison of domestic and foreign studies has been utilized to extensively employ junction termination extension(JTE)structures for power devices.However,achieving a gradual doping concentration change in the lat...