InSb晶片的显微拉曼研究  

Micro-Raman Study of InSb Wafers

作　　者：柏伟[1] 金研 李乾 董涛 折伟林[1] BAI Wei;JIN Yan;LI Qian;DONG Tao;SHE Wei-lin(North China Research Institute of Electro-Optics,Beijing 100015,China)

机构地区：[1]华北光电技术研究所,北京100015

出　　处：《红外》2023年第1期11-16,共6页Infrared

摘　　要：对热处理前后的InSb晶片进行了显微拉曼面扫描测试,开发了一种新的InSb晶片应力面分布表征方式。热处理前后InSb晶片的横向光学(Transverse Optical,TO)声子散射峰分别位于179.3 cm^(-1)和178.5 cm^(-1);纵向光学(Longitudinal Optical,LO)声子散射峰分别位于188.8 cm^(-1)和188.7 cm^(-1);特征峰的半峰宽分别为5.8 cm^(-1)和5.0 cm^(-1)。X射线双晶衍射曲线半峰宽值分别为12.10~20.04 arcsec和7.61~7.74 arcsec。用经热处理后的晶片制得的器件在80℃烘烤20天后,盲元增加量较小,整体数量较少。这表明热处理释放了晶片的残余应力,对后期抑制器件新增盲元存在有利影响,为新一代超高性能、超大面阵红外探测器的制备奠定了材料基础。The micro Raman scanning test was carried out on InSb wafer before and after heat treatment.A new characterization method of stress surface distribution of InSb wafer was developed.The transverse optical(TO)phonon scattering peaks of InSb before and after heat treatment are 179.3 cm^(-1)and 178.5 cm^(-1),respectively.The longitudinal optical(LO)phonon scattering peaks of are 188.8 cm^(-1)and 188.7 cm^(-1),respectively.The half-peak widths of characteristic peaks are 5.8 cm^(-1)and 5.0 cm^(-1),respectively.The half-peak widths of X-ray dual-crystal diffraction curves are 12.10--20.04 arcsec and 7.61--7.74 arcsec,respectively.For devices made of heat-treated InSb wafers,the increment of blind element is less after baking at 80℃for 20 days,and the overall quantity is small.This indicates that the heat treatment releases the residual stress of the wafer,which has a favorable effect on the new blind pixel in the late suppression device,and lays a material foundation for the preparation of a new generation of infrared detector with ultra-high performance and ultra-large size.

关 键 词：锑化铟 显微拉曼 热处理 应力 晶体质量 

分 类 号：TN213[电子电信—物理电子学]