碲锌镉衬底的化学机械抛光液研究  

Research on Chemical Mechanical Polishing Slurry of CdZnTe Substrates

作　　者：王琰璋 岳晓辉 李振兴 柏伟[1] 侯晓敏[1] WANG Yan-zhang;YUE Xiao-hui;LI Zhen-xing;BAI Wei;HOU Xiao-min(North China Research Institute of Electro-Optics,Beijing 100015,China)

机构地区：[1]华北光电技术研究所,北京100015

出　　处：《红外》2023年第1期17-22,共6页Infrared

摘　　要：作为碲锌镉衬底表面加工的重要工序,化学机械抛光(Chemical Mechanical Polishing, CMP)的加工效果决定了碲锌镉衬底的表面质量和生产效率。抛光液是CMP的关键影响因素之一,直接影响衬底抛光后的表面质量。对碲锌镉衬底CMP工艺使用的抛光液进行了研究,探究了以二氧化硅溶胶和过氧化氢为主体的抛光液体系在不同pH值、不同磨料浓度下对衬底抛光表面质量和去除速率的影响。结果表明,使用改进后的抛光液体系对碲锌镉衬底进行CMP,能够在获得超光滑表面的同时实现高效率加工,为批量化制备高表面质量的碲锌镉衬底奠定了良好基础。As an important process in surface polishing of CZT substrate, the surface quality and production efficiency of CZT substrate are determined by the polishing results of CMP. Polishing fluid is one of the key influencing factors of CMP, which directly affects the surface quality of substrate after polishing. In this paper, the polishing liquid used in CMP process of CZT substrate is studied. The effects of silica sol and hydrogen peroxide on the surface quality and removal rate of the substrate are investigated under different pH values and abrasive concentrations. The results show that the high efficiency processing can be achieved by using the modified polishing liquid to perform CMP on CZT substrate while an ultra-smooth surface is obtained, which lays a good foundation for mass preparation of CZT substrate with high surface quality.

关 键 词：碲锌镉 化学机械抛光 磨料浓度 PH值 

分 类 号：TB31[一般工业技术—材料科学与工程] TN213[电子电信—物理电子学]