一种基于ASM-HEMT模型改进陷阱效应的GaN HEMT器件非线性模型  

A Non-Linear Model for GaN HEMTs with an Improved Trap Effect Based on ASM-HEMT Model

作　　者：李静强[1] 赵哲言 王生国[1,2] 付兴中[1] 魏碧华[1] Li Jingqiang;Zhao Zheyan;Wang Shengguo;Fu Xingzhong;Wei Bihua(The 13^(th)Research Institute,CETC,Shijiazhuang 050051,China;Science and Technology on ASIC Laboratory,Shijiazhuang 050051,China)

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051 [2]专用集成电路重点实验室,石家庄050051

出　　处：《半导体技术》2022年第12期972-978,1026,共8页Semiconductor Technology

摘　　要：GaN高电子迁移率晶体管(HEMT)器件受制于陷阱效应,建立准确的非线性模型非常困难。介绍了表面势物理基高电子迁移率高级电路模型(ASM-HEMT),分析了标准ASM-HEMT模型在表征陷阱效应方面的不足,进而建立了新的陷阱模型电路拓扑及模型方程,新陷阱模型可以更好地表征器件陷阱俘获和释放电子的不对称性。基于0.25μm GaN HEMT器件,进行了脉冲I-V、多偏置S参数、负载牵引仿真及测试,并对新模型进行参数提取和建模。经过对比仿真和测试结果发现,新模型的仿真结果与实测结果比标准ASM-HEMT模型更加吻合,说明新模型表征陷阱效应更加准确,提升了模型的准确性,进而提高GaN HEMT功率放大器设计仿真的准确性。GaN high electron mobility transistors(HEMTs)are subject to the trap effect,so it is very difficult to establish an accurate non-linear model.The surface potential physics-based advanced SPICE model for HEMT(ASM-HEMT)was introduced.The shortcomings of the standard ASM-HEMT model in characterizing the trap effect were analyzed.A new trap model circuit topology and model equations were established,which could better characterize the asymmetry of trapping and releasing electrons in device traps.Based on the 0.25μm GaN HEMT,pulse I-V,multi-bias S parameters and loadpull were simulated and tested,and the new model was used for parameter extraction and modeling.After comparing simulation and test results,it is found that the simulation results of the new model are more consistent with the test results than those of the standard ASM-HEMT model,indicating that the new model is more accurate in characterizing the trap effect,which improves the accuracy of the model,and further improves the accuracy of the design simulation of the GaN HEMT power amplifier.

关 键 词：GaN高电子迁移率晶体管(HEMT) 高电子迁移率高级电路模型(ASM-HEMT) 非线性模型 陷阱效应 电流崩塌效应 

分 类 号：TN302[电子电信—物理电子学]