分子束外延GaAs/Si(001)材料反相畴的湮灭机理  

Annihilation Mechanism of Antiphase Domains in GaAs/Si(001)Materials Grown by Molecular Beam Epitaxy

作　　者：肖春阳 王俊 李家琛 王海静 贾艳星 马博杰 刘倬良 明蕊 白一鸣[2] 黄永清 任晓敏 罗帅[3] 季海铭[3] Xiao Chunyang;Wang Jun;Li Jiachen;Wang Haijing;Jia Yanxing;Ma Bojie;Liu Zhuoliang;Ming Rui;Bai Yiming;Huang Yongqing;Ren Xiaomin;Luo Shuai;Ji Haiming(State Key Laboratory of Information Photonics and Optical Communications,School of Electronic Engineering,Beijing University of Posts and Telecommunications,Beijing 100876,China;State Key Laboratory of New Emergy Power System,North China Electric Power University,Beijing 102206,China;Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China)

机构地区：[1]北京邮电大学电子工程学院信息光子学与光通信国家重点实验室,北京100876 [2]华北电力大学新能源电力系统国家重点实验室,北京102206 [3]中国科学院半导体研究所半导体材料科学重点实验室,北京100083

出　　处：《中国激光》2022年第23期33-38,共6页Chinese Journal of Lasers

基　　金：国家自然科学基金(61874148,61974141);国家重点研发计划重点专项课题(2018YFB2200104);北京市科技计划课题(Z191100004819012);北京市自然科学基金(4212055);国家创新研究群体科学基金(62021005);高校学科创新引智计划项目(BP0719012)。

摘　　要：从第一性原理出发,计算了不同温度下GaAs材料中沿{110}、{111}和{112}面传播的反相畴(APD)形成能,探索了反相畴的湮灭机理。结果表明,当温度达到660 K以上时,APD最稳定的传播晶面从{110}转变到{112}。通过分子束外延(MBE)技术,在无偏角Si(001)衬底上生长了1.4μm厚的GaAs外延层。测试结果表明,随着生长温度的升高,APD密度降低,不同传播面的湮灭现象增加。反相畴在较高的生长温度下更易于扭折到{112}面,从而与其他反相畴相遇并发生湮灭。该结果对全MBE生长高性能无偏角硅基激光器研究具有重要意义。Objective Anunprocessed,on-axis Si substrate has a single-layer atomic step structure on its surface.The epitaxial growthofⅢ-Ⅴmaterials on substrates results in the high-energy planar defect called antiphasedomain(APD).The APD reduces the minority carrier lifetime in devices,degrading the performance of devices.Placing an on-axis Si substrate in the hydrogen environment for high-temperature annealing can promote the transformation of single-layer atomic steps into double-layer atomic steps and suppress APD generation at the Ga As/Si interface.However,the molecular beam epitaxy(MBE)technology cannot take hydrogen as annealing environment.Existing experimental methods involve changing the experimental process,which is unique and difficult to reproduce,to promote the annihilation of APD in Ga As materials.However,the APD annihilation mechanism remains unclear.In this study,the formation energyof APD propagating along the{110},{111},and{112}planes in Ga As materials at different temperatures is calculated using the first principle to explore the APD annihilation mechanism.The most stable propagating plane of the APD changes from{110}to{112}when the temperature exceeds 660 K.A 1.4-μm thick Ga As epitaxial layer is grown on an on-axis Si(001)substrate using the MBE technology.The results demonstrate that the APD density on the Ga As surface decreases and the annihilation probability of the APD increases with an increase in the growth temperature.At high growth temperatures,the APD can easily be twisted to the{112}plane and annihilate.Methods Aiming at the phenomenon of APD kink and annihilation in on-axis Ga As/Si(001)epitaxial materials,this paper presents the detailed exploration and analysis of theoretical simulations and experiments,respectively.According to the different propagation planes of the APD in Ga As,APD models propagating along the{110},{111},and{112}planes are established.The APD formation energy on these three propagation surfaces and their variation trends with temperature are obtained using the

关 键 词：材料 硅基激光器 第一性原理 分子束外延 反相畴 无偏角Si(001) 

分 类 号：O469[理学—凝聚态物理]