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作 者:李昌恒 刘奎仁 魏世丞 韩庆 王博 王玉江 LI Chang-heng;LIU Kui-ren;WEI Shi-cheng;HAN Qing;WANG Bo;WANG Yu-jiang(Institute of Metallurgy Engineering,Northeastern University,Shenyang 110057,China;National Key Laboratory for Remanufacturing,Academy of Armored Forces Engineering,Beijing 100072,China)
机构地区:[1]东北大学冶金学院,辽宁沈阳110819 [2]陆军装甲兵学院装备再制造技术国防科技重点实验室,北京100072
出 处:《材料保护》2023年第2期111-119,共9页Materials Protection
基 金:国家科技重大专项(2017-Ⅶ-0012-0109)资助。
摘 要:磁控溅射在氮化钛薄膜制备方面具有显著优势,工艺参数对成膜质量影响显著。概述了氮化钛薄膜的晶体结构、物理性质及磁控溅射技术的工作原理及主要分类,重点综述了溅射功率、溅射时间、基底偏压、沉积温度、溅射气压、氮分压等工艺参数对氮化钛薄膜组织结构、表面形貌、沉积速率、表面粗糙度、择优取向、电学性能、力学性能、耐磨损性能、耐腐蚀性能、析氢性能等的影响规律和作用机理。此外,还就退火时间与退火温度对薄膜组织结构及电阻率的影响,基底材料对薄膜沉积速率与表面粗糙度的影响,以及靶材选取对薄膜的制备方式与成膜过程的影响等的研究与应用现状进行了介绍,进而展望了磁控溅射技术在制备高质量氮化钛薄膜领域的发展趋势。Magnetron sputtering technology has significant advantages in the preparation of TiN films.Technological parameters have an obvious impact on the quality of films.This paper summarized the crystal structure,physical properties of TiN films and the working principle and main classification of magnetron sputtering technology.In addition,the work expounded the laws of influence and mechanism of sputtering power,sputtering time,substrate bias voltage,deposition temperature,sputtering pressure and nitrogen partial pressure on organization structure,surface appearance,deposition rate,surface roughness,preferred orientation,electrical properties,mechanical properties,wear resistance,corrosion resistance,hydrogen evolution properties,etc.Besides,this paper also introduced the situation of research and application of annealing time and annealing temperature on the organization structure and resistivity of films,substrate materials on the deposition rate and surface roughness of films,targets selection on the preparation method and forming process of films.Furthermore,the development trend of magnetron sputtering technology in the preparation of high-quality TiN films was prospected.
分 类 号:TG174.44[金属学及工艺—金属表面处理]
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