2~18GHz超宽带GaN分布式功率放大器MMIC  

2-18 GHz Ultra Wideband GaN Distributed Power Amplifier MMIC

作　　者：韩雷 边照科 王生国[1,2] 刘帅[1] Han Lei;Bian Zhaoke;Wang Shengguo;Liu Shuai(The 13^(th)Research Institute,CETC,Shjiazhuang 050051,China;Science and Technology on ASIC Laboratory,Shjiazhuang 050051,China)

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051 [2]专用集成电路重点实验室,石家庄050051

出　　处：《半导体技术》2023年第2期146-150,共5页Semiconductor Technology

摘　　要：介绍了一款基于0.25μm GaN高电子迁移率晶体管(HEMT)工艺的2~18 GHz超宽带功率放大器单片微波集成电路(MMIC)。采用两级非均匀分布式拓扑结构,通过调整各级管芯输出阻抗和微带线阻抗实现超宽带的功率匹配。在管芯前端增加电阻、电容并联结构,提升各级电路稳定性并提高截止频率。为改善整体电路布局,在前级和末级放大器之间加入50Ω微带线,既可便于单侧加电,又使芯片尺寸更加合理。测试结果表明,功率放大器MMIC在2~18 GHz频带内,连续波饱和输出功率达到10 W,功率增益大于15 dB,功率附加效率大于20%。GaN非均匀分布式功率放大器MMIC在超宽带、高功率等方面具有广阔的应用前景。A 2-18 GHz ultra wideband power amplifier monolithic microwave integrated circuit(MMIC)based on 0.25μm GaN high electron mobility transistor(HEMT)technology was introduced.The two-stage non-uniform distributed topology was adopted,and the ultra wideband power matching was realized by adjusting the output impedance of each stage of the die and the impedance of the microstrip line.The parallel structure of capacitor and resistor was inserted at the front end of the die to improve the stability and cut-off frequency of each stage circuits.In order to improve the overall circuit layout,a 50Ωmicrostrip line was inserted between the front stage and the end stage amplifiers,which was benefit to one-sided power supply and a more comfortable layout was achieved.The test results show that in 2-18 GHz frequency band,the continuous wave saturation output power of the power amplifier MMIC reaches 10 W,the power gain is greater than 15 dB,and the power added efficiency is greater than 20%.GaN non-uniform distributed power amplifier MMIC has widely application prospects in ultra wideband,high power and other aspects.

关 键 词：超宽带 非均匀分布式功率放大器 GAN 高效率 单片微波集成电路(MMIC) 

分 类 号：TN43[电子电信—微电子学与固体电子学] TN722.16