高能电子辐照对三结GaAs激光电池特性的影响  

Effects of High-Energy Electron Irradiation on Characteristics of Three-Junction GaAs Laser Power Converters

作　　者：韩堰辉 孙玉润[2] 王安成 施祥蕾 李彬 孙利杰[3] 董建荣[2] Han Yanhui;Sun Yurun;Wang Ancheng;Shi Xianglei;Li Bin;Sun Lijie;Dong Jianrong(School of Nano-Tech and Nano-Bionics,University of Science and Technology of China,Suzhou 215123,China;Key Laboratory of Nano Devices and Applications,Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,Suzhou 215123,China;State Key Laboratory of Space Power Technology,Shanghai Institute of Space Power Sources,Shanghai 200245,China)

机构地区：[1]中国科学技术大学纳米技术与纳米仿生学院,江苏苏州1215123 [2]中国科学院、苏州纳米技术与纳米仿生研究所纳米器件与应用重点实验室,江苏苏州215123 [3]上海空间电源研究所空间电源技术国家重点实验室,上海200245

出　　处：《半导体技术》2023年第2期170-176,共7页Semiconductor Technology

摘　　要：研究了能量为1 MeV的电子辐照对三结GaAs激光电池(LPC)性能的影响。不同剂量电子辐照后三结GaAs LPC光照下的I-V特性测试结果表明,三结GaAs LPC短路电流、开路电压和最大输出功率的衰减随电子辐照剂量的提高而增大。通过测量不同波长激光照射下三结GaAs LPC的宽电压范围I-V曲线,确定了各子电池对应的光生电流,结果显示各子电池光生电流衰减随辐照剂量增加而不同程度地增大,越靠近衬底的子电池电流衰退越严重。利用wxAMPS软件模拟了各子电池光生电流随缺陷密度的变化关系,结合实验和模拟结果得到了各子电池辐照后的缺陷密度及缺陷引入率,结果表明各子电池受电子辐照后的缺陷引入率大致相同,约为6.7。可通过优化各结子电池厚度达到提高三结GaAs LPC抗辐照性能的目的。The effects of 1 MeV electron irradiation on characteristics of the three-junction GaAs laser power converter(LPC)were investigated.The I-V characteristic test results of the three-junction GaAs LPC under illumination with different fluence of electron irradiation show that the short-circuit current,open-circuit voltage and maximum output power of the three-junction GaAs LPC gradually degrade with the increase of electron irradiation fluence.The photocurrents of respective subcells were determined by measuring the wide voltage range I-V curves of three-junction GaAs LPCs under laser illumination of different wavelengths.It is indicated that the photocurrents of the three subcells decrease with the increase of irradiation fluence at different rates,and the bottom subcell demonstrates the most severe performance degradation.The wxAMPS software was utilized to simulate the dependences of the subcells′photocurrents on defect density,and the defect densities and defect introduction rates of the subcells were obtained by combining the experimental and simulation results.The results show that all the defect introduction rates of the subcells by electron irradiation are about 6.7.The irradiation resistance of the three-junction GaAs LPC can be improved by optimizing the thickness of each subcell.

关 键 词：三结激光电池(LPC) 电子辐照损伤 缺陷密度 电学性能退化 抗辐照加固 

分 类 号：TN248.4[电子电信—物理电子学]