红外探测器倒装互连工艺中的铟柱高度研究  

Research on indium bumps height in the flip chip package of IRFPA

作　　者：刘森[1] 黄婷 赵璨 张磊[1] LIU Sen;HUANG Ting;ZHAO Can;ZHANG Lei(North China Research Institute of Electro-Optics,Beijing 100015,China)

机构地区：[1]华北光电技术研究所,北京100015

出　　处：《激光与红外》2023年第2期271-275,共5页Laser & Infrared

摘　　要：针对制冷型红外焦平面探测器倒装互连工艺中的铟柱高度展开了调研,结果显示目前行业内关于该工艺中的铟柱高度设计的离散性较大,铟柱高度范围为5~24μm,差值达到了19μm。本文构建了包含探测器芯片、铟柱、填充胶、钝化层和UBM的像元级有限元仿真模型,并根据不同的铟柱直径和高度开展了60组仿真计算,根据计算结果绘制了p-n结区最大应力值的变化曲线,并分析了应力变化规律。In this paper, the height of the Indium bumps in the flip chip package of the IRFPA is researched.The result shows that there is a large dispersion in the industry regarding the design of the height of the Indium bumps in this process, with the height of the Indium bumps ranging from 5 μm to 24 μm, with a difference of 19 μm.In this paper, a finite element simulation model is established of pixel-level, including chip, Indium bumps, underfill, passivation layer and UBM,and sixty sets of simulations are carried out according to different Indium column diameters and heights.The variation curve of the maximum stress value in the p-n junction region is plotted according to the calculation results and the stress variation law is analyzed.

关 键 词：IRFPA 铟柱 倒装互连 高度 

分 类 号：TN214[电子电信—物理电子学]