铁电场效应晶体管材料设计的研究进展  

Research progress in the design of ferroelectric field-effect transistor material

作　　者：高武 李星星 刘礼祥 张志伟 郭伟钦 GAO Wu;LI Xingxing;LIU Lixiang;ZHANG Zhiwei;GUO Weiqin(Faculty of Intelligent Manufacturing,Wuyi University,Jiangmen,Guangdong 529020,China)

机构地区：[1]五邑大学智能制造学部,广东江门529020

出　　处：《信息记录材料》2023年第2期28-31,36,共5页Information Recording Materials

摘　　要：铁电场效应晶体管(FeFET)作为最有潜力的下一代非易失性存储器之一,引起研究人员的广泛关注。本文系统阐述了Fe FET的工作原理及结构设计,介绍了Fe FET结构中铁电材料和缓冲层材料的探索历程及所对应的器件性能。本文提出了一种新型Fe FET结构设计,有望改善薄膜之间的界面效应。最后总结了Fe FET的研究进展,并对未来研究做出展望。Ferroelectric field-effect transistors(FeFETs)have attracted a lot of attention from researchers as one of the most promising next-generation non-volatile memories.In this paper,the working principle and structure design of FeFET are systematically described,and the exploration history of ferroelectric materials and buffer layer materials in FeFET structure and the corresponding device performance are introduced.A novel FeFET structure design is proposed,which is expected.

关 键 词：铁电场效应晶体管 非易失性存储器 铁电材料 缓冲层材料 界面效应 薄膜 结构设计 器件性能 

分 类 号：TN32[电子电信—物理电子学]