高端电子制程中钴化学机械抛光剂的研究进展(Ⅰ)──氧化剂  

Progress in research of slurry for chemical mechanical polishing of cobalt during fabrication of high-end electronics:PartⅠ——Oxidants

作　　者：段欣雨 万传云 吴兆键 倪哲易 王浩宇 DUAN Xinyu;WAN Chuanyun;WU Zhaojian;NI Zheyi;WANG Haoyu(School of Chemistry and Environmental Engineering,Shanghai University of Applied Sciences,Shanghai 201418,China)

机构地区：[1]上海应用技术大学化学与环境工程学院,上海201418

出　　处：《电镀与涂饰》2023年第5期41-46,共6页Electroplating & Finishing

摘　　要：介绍了化学机械抛光(CMP)的基本原理。概述了Co作为阻挡层及互连材料时,化学机械抛光液中常用氧化剂(包括H_(2)O_(2)、NaClO和K_(2)S_(2)O_(8))的研究进展和作用机制。The basic principle of chemical mechanical polishing(CMP)was introduced.The research progress of oxidants such as H_(2)O_(2),NaClO,and K_(2)S_(2)O_(8)commonly applied to the CMP of Co barrier and interconnect were reviewed.The action mechanism of the oxidants was discussed.

关 键 词：高端电子 钴 化学机械抛光 抛光液 氧化剂 综述 

分 类 号：TG178[金属学及工艺—金属表面处理] TQ153.6[金属学及工艺—金属学]