Al_(2)O_(3)掺杂对ZnO薄膜结构及光电性能的影响  

Effect of Al_(2)O_(3)Doping on the Structure and Photoelectric Properties of ZnO Films

作　　者：陈星辉[1] 陈家辉 张聚航 王嘉悦 邵天一 陈光伟[1] CHEN Xinghui;CHEN Jiahui;ZHANG Juhang;WANG Jiayue;SHAO Tianyi;CHEN Guangwei(College of Science,Hunan University of Technology,Zhuzhou Hunan 412007,China)

机构地区：[1]湖南工业大学理学院,湖南株洲412007

出　　处：《湖南工业大学学报》2023年第2期38-43,共6页Journal of Hunan University of Technology

基　　金：湖南省大学生创新训练基金资助项目(湘教通[2021]197-3035)。

摘　　要：以ZnAl_(2)O_(4)陶瓷靶为溅射源,采用射频磁控溅射法,利用优化的氧化锌薄膜制备工艺,在石英衬底上沉积了Al_(2)O_(3)掺杂ZnO(AZO)透明导电薄膜,并通过X射线衍射仪、紫外-可见分光光度计、薄膜测厚仪、霍尔效应仪对其进行了结构表征和光电性能测试,研究了靶材中Al_(2)O_(3)不同掺杂质量分数(1%~5%)对薄膜结构及光电性能的影响。结果表明:沉积所得AZO薄膜为六方形纤锌矿结构,沿(002)晶面择优取向生长;随着Al_(2)O_(3)掺杂比例的提高,薄膜禁带宽度先增大后减小,电阻率先减小后增大;当Al_(2)O_(3)掺杂质量分数为4%时,薄膜择优取向性最好,可见光透过率最高,电阻率最小,具有最优的结晶质量和光电性能。With ZnAl_(2)O_(4) ceramic target adopted as the sputtering source,Al_(2)O_(3) doped ZnO(AZO)transparent conductive films are deposited on quartz substrate by RF magnetron sputtering with an optimized preparation process of zinc oxide films.The structure and photoelectric properties of the films are characterized by X-ray diffractometer,UV-VIS spectrophotometer,film thickness gauge and Hall effect meter,followed by a study on the effects of Al_(2)O_(3) doping mass fraction(1%~5%)in the target on the structure and photoelectric properties of the films.The results show that the deposited AZO films are characterized with a hexagonal wurtzite structure,which grow along the preferred orientation of the(002)crystal plane.With the increase of Al_(2)O_(3) doping ratio,the band gap width of the films undergoes an initial increase and a subsequent decrease,while the resistance decreases firstly and increases subsequently.With the doping mass percentage of Al_(2)O_(3) reaching 4%,the film is characterized with the best preferred orientation,the largest grain size,the highest average visible light transmittance,the lowest resistivity,and the optimized crystal quality and photoelectric properties.

关 键 词：AZO薄膜 掺杂 磁控溅射 光电性能 择优取向 结晶质量 

分 类 号：O484.41[理学—固体物理]