面向三维集成的等离子体活化键合研究进展  

Research Progress in Plasma Activated Bonding for 3D Integration

作　　者：牛帆帆 杨舒涵 康秋实 王晨曦[1] NIU Fanfan;YANG Shuhan;KANG Qiushi;WANG Chenxi(State Key Lab of Advanced Welding and Joining,Harbin Institute of Technology,Harbin 150001,China)

机构地区：[1]哈尔滨工业大学先进焊接与连接国家重点实验室,哈尔滨150001

出　　处：《电子与封装》2023年第3期41-51,共11页Electronics & Packaging

基　　金：国家自然科学基金重大研究计划(92164105);国家自然科学基金面上项目(51975151);黑龙江省“头雁”团队(HITTY-20190013)。

摘　　要：三维集成技术已成为促使半导体芯片步入后摩尔时代的重要支撑。晶圆直接键合技术无需微凸点和底充胶填充工艺,依靠原子间相互作用力即可实现高密度与高强度互连,是三维集成发展的重要研究方向之一。其中等离子体活化作为一种高效的表面处理手段,是晶圆低温键合的关键。针对等离子体活化低温键合技术在半导体芯片同质或异质键合中的研究进展进行了综述,主要介绍了等离子体活化在硅基材料直接键合及金属-介质混合键合中的作用机理和键合效果,进而对该技术的未来发展趋势进行了展望。Three-dimensional(3D)integration technology has become an important support to promote semiconductor chips into the post Moore era.Direct wafer bonding technology can realize high-density and high-strength interconnection by relying on the interatomic interaction without the need of micro bumps and underfill filling process,which is one of the important research directions in the development of 3Dintegration.As an efficient surface treatment method,plasma activation is the key to wafer bonding at lowtemperature.The research progress of plasma activated low temperature bonding technology in homogeneous or heterogeneous bonding of semiconductor chips is reviewed.The mechanism and bonding effect of plasma activated in direct bonding of silicon-based materials and metal-dielectric hybrid bonding are mainly introduced.And the future development trend of this technology is prospected.

关 键 词：等离子体 表面活化 低温键合 三维集成 

分 类 号：TN305.94[电子电信—物理电子学]