先进封装铜-铜直接键合技术的研究进展  

Research Progress of Copper-Copper Direct Bonding Technology in Advanced Packaging

作　　者：张明辉 高丽茵[2,3] 刘志权 董伟 赵宁[1] ZHANG Minghui;GAO Liyin;LIU Zhiquan;DONG Wei;ZHAO Ning(School of Materials Science and Engineering,Dalian University of Technology,Dalian 116024,China;Shenzhen Institute of Advanced Technology,Chinese Academy of Sciences,Shenzhen 518055,China;Shenzhen Institute of Advanced Electronic Materials,Shenzhen 518103,China)

机构地区：[1]大连理工大学材料科学与工程学院,辽宁大连116024 [2]中国科学院深圳先进技术研究院,广东深圳518055 [3]深圳先进电子材料国际创新研究院,广东深圳518103

出　　处：《电子与封装》2023年第3期52-62,共11页Electronics & Packaging

基　　金：广东省基础与应用基础研究基金(2022A1515011485)。

摘　　要：在后摩尔时代,先进三维封装技术成为实现电子产品集成化、小型化的重要出路。应用于封装互连的传统无铅锡基钎料由于存在金属间化合物脆性、电迁移失效、制备工艺限制等问题,已不再适用于窄间距、小尺寸的封装。金属铜的电阻率低、抗电迁移性能好,其工艺制备尺寸可减小到微米级且无坍塌现象。铜-铜(Cu-Cu)直接互连结构可以实现精密制备以及在高电流密度下服役。对Cu-Cu键合材料的选择、键合工艺的特点及服役可靠性的相关研究进展进行了总结。In the post-Moore-era,advanced three-dimension(3D)packaging technology has become an important way to realize the integration and miniaturization of electronic products.Because of the brittleness of intermetallic compounds(IMCs),electromigration failure and the limitation of fabrication process,the traditional lead-free Sn-based solder used in packaging interconnection is no longer suitable for narrowspacing and small size packaging.Copper has low resistivity and good electromigration resistance,and its process size can be reduced to micron level without collapse.The copper-copper(Cu-Cu)direct interconnection structure can realize precise preparation and service under high current density.The selection of Cu-Cu bonding materials,the characteristics of bonding process and the related research progress of service reliability are summarized.

关 键 词：Cu-Cu直接键合 先进电子封装 表面处理 键合工艺 

分 类 号：TN405.97[电子电信—微电子学与固体电子学]