CdSeTe分子束外延技术研究  

Research on CdSeTe Molecular Beam Epitaxy Technology

作　　者：何温 王丛[1] 高达[1] 邢伟荣[1] 柏伟[1] 杨海燕[1] 折伟林[1] HE Wen;WANG Cong;GAO Da;XING Weirong;BAI Wei;YANG Hai-yan;SHE Wei-lin(North China Research Institute of Electro Optics,Bejing 100015,China)

机构地区：[1]华北光电技术研究所,北京100015

出　　处：《红外》2023年第3期8-13,共6页Infrared

摘　　要：对HgCdTe红外探测器CdSexTe1-x衬底材料的分子束外延生长条件、组分调整等进行了简单介绍。生长条件包括生长结构(主要有CdSexTe1-x/CdTe/ZnTe/Si、CdSexTe1-x/ZnTe/GaAs等)、生长温度(300℃左右)、生长厚度(5μm左右)等。组分调整包括分析Se组分随(JSe+JTe)/JCd和JSe/(JSe+JTe)的变化。JSe/(JSe+JTe)值较小时,Se组分较难融入外延层;JSe/(JSe+JTe)值较大时,Se组分增长较迅速。同时,若JSe/(JSe+JTe)值较小,则Se组分增长趋势相对较易控制。当JSe/(JSe+JTe)值一定时,Se组分随着(JSe+JTe)/JCd的减小而增大。Se组分变化的突增点随(JSe+JTe)/JCd值的减小而增大。本文可为高性能HgCdTe红外探测器的制备提供一定的参考。The molecular beam epitaxial growth conditions and component adjustment of CdSexTe1-x substrate material for HgCdTe infrared detectors are briefly introduced.Growth conditions include growth structure(mainly CdSexTe1-x/CdTe/ZnTe/Si,CdSexTe1-x/ZnTe/GaAs,etc.),growth temperature(about 300℃),and growth thickness(about 5μm),etc.Component adjustment includes analyzing the changes of Se components with(JSe+JTe)/JCd and JSe/(JSe+JTe).When the JSe/(JSe+JTe)value is small,it is difficult for the Se component to incorporate into the epitaxial layer.When the JSe/(JSe+JTe)value is large,the Se component increases rapidly.At the same time,when the JSe/(JSe+JTe)value is small,the growth trend of the Se component is relatively easy to control.When the value of JSe/(JSe+JTe)is constant,the Se component increases with the decrease of(JSe+JTe)/JCd.The sudden increase point of Se component change increases with the decrease of(JSe+JTe)/JCd value.This paper can provide some reference for the preparation of high-performance HgCdTe infrared detectors.

关 键 词：CdSexTe1-x 分子束外延 组分调整 

分 类 号：TN215[电子电信—物理电子学]