用于GaN HEMT栅驱动芯片的高性能过温保护电路  

High performance over temperature protection circuit for GaN HEMT gate driver

作　　者：李亮[1] 周德金 黄伟 陈珍海 LI Liang;ZHOU Dejin;HUANG Wei;CHEN Zhenhai(School of electronic mfbrmation engineering,Suzhou Vocational University,Suzhou 215104,China;Wuxi research instituteof applied technologies Tsinghua University,Wuxi 214072,China;School of Microelectronics Fudan University,Shanghai 200443,China;Huangshan University,Engineering Technology Research Center of Intelligent Microsystems AnHui Province,Huangshan 245021,China)

机构地区：[1]苏州市职业大学电子信息工程学院,江苏苏州215104 [2]清华大学无锡应用技术研究院,江苏无锡214072 [3]复旦大学微电子学院,上海200433 [4]黄山学院智能微系统安徽省工程技术研究中心,安徽黄山245041

出　　处：《微电子学与计算机》2023年第3期93-98,共6页Microelectronics & Computer

基　　金：江苏省高职院校教师专业带头人高端研修项目(2021GRFX058);智能微系统安徽省工程技术研究中心开放项目(MSZXXM2001)。

摘　　要：设计了一种用于GaNHEMT器件栅驱动芯片的高性能温度保护电賂,能精确响应并输出保护信号以确保电賂安全.过温保护采用两路温度检测电路来采集温度信号电压值并对电压差值进行放大,比较滤波后经过具有滞回功能的施密特触发器输出整形保护信号,可以克服共模噪声和温度应力的影响.基于CSMC 0.18 μm BCD工艺,完成了电路设计验证与测试,结果显示电路功能正确,可满足GaNHEMT器件栅驱动芯片应用要求.In this paper,a high performance temperature protection for GaN HEMT gate driver chip is designed,which can accurately respond and output protection signal to ensure the circuit safety.The over temperature protection uses two temperature detection circuits to collect the voltage value of the temperature signal and amplify the voltage difference,then after comparative filtering,a Schmitt trigger with hysteresis function outputs the shaping protection signal,which can overcome the influence of common mode noise and temperature stress.The design is based on CSMC 0.18 μm BCD process,and the circuit design verification and testing are completed.The results show that the circuit function is correct and can meet the application requirements of GaN HEMT gate driver.

关 键 词：GAN 半桥驱动 过温保护 比较器 温度检测 

分 类 号：TN433[电子电信—微电子学与固体电子学]