InGaAs单光子雪崩焦平面研究进展(特邀)  

Research progress of InGaAs single-photon avalanche focal plane(invited)

作　　者：崔大健[1,2] 敖天宏 奚水清 张承[1,2] 高若尧 袁俊翔[1,2] 雷勇 Cui Dajian;Ao Tianhong;Xi Shuiqing;Zhang Cheng;Gao Ruoyao;Yuan Junxiang;Lei Yong(Chongqing Optoelectronics Research Institute,Chongqing 400060,China;Chongqing Key Laboratory of Core Optoelectronic Devices for Quantum Communication,Chongqing 400060,China)

机构地区：[1]重庆光电技术研究所,重庆400060 [2]量子通信核心光电器件重庆重点实验室,重庆400060

出　　处：《红外与激光工程》2023年第3期1-11,共11页Infrared and Laser Engineering

摘　　要：雪崩光电二极管(APD)是一种高灵敏度光电器件。按照工作电压的不同可分为线性APD和盖革APD。其中,盖革APD的工作电压高于击穿电压,利用半导体材料内部载流子的高雪崩增益可实现单光子级信号探测,也被称为单光子雪崩光电二极管(SPAD)。InGaAs材料SPAD在0.9~1.7μm光谱范围内有高量子效率,是1.06、1.55μm主动激光探测的理想探测器。通过将高效率InGaAs SPAD阵列芯片与CMOS计时/计数读出电路芯片集成封装,制备的雪崩焦平面探测器可对光子信号进行时间量化,在三维激光雷达、远距离激光通信、稀疏光子探测等领域有广泛应用。介绍了InGaAs单光子雪崩焦平面的器件结构及基本原理,在此基础上回顾了国内外雪崩焦平面技术的研究进展,并对未来发展方向进行了展望。Significance Single photon detector is a kind of highly sensitive device that can realize single-photon-level signal detection.Compared with photomultiplier tubes(PMT)with large dark counts rate and large device sizes and superconducting single photon detectors(SSPD)with large-volume refrigeration devices and difficult integration into arrays,the single-photon avalanche photodiode(SPAD)with small size and easy integration into arrays exhibit the advantages of high speed,high sensitivity and high quantum efficiency.InGaAs has the characteristics of direct band gap,large ionization coefficient ratio and lattice constant matching with InP,which is currently the infrared detector material with the best performance in the near-infrared band.And InGaAs/InP SPAD is an ideal detector for active laser detection at 1.06μm and 1.55μm.Through the integrated packaging of high-efficiency InGaAs SAPD array and counting CMOS readout integrated circuit(ROIC),the obtained InGaAs SAPD focal plane detector has the characteristics of high sensitivity,high accuracy,small size,and solid-state packaging.The device has been widely used in 3D LIDAR,deep-space laser communication,sparse photon detection and other fields and a research hotspot in the field of single-photon detection in recent years.Progress The research progress of InGaAs SAPD focal plane detector can be illustrated by the performance improvement of SPAD array chip and the application progress of ROIC.And the research progress of SPAD array chip includes the research progress of array scale and pixel center distance,crosstalk suppression,photo detection efficiency(PDE)and dark count rate(DCR).The array scale and pixel center spacing of the SPAD array chip determine the spatial resolution of the device.In the early stage,a single CMOS ROIC and a SPAD wafer were electrically connected by face-to-face bonding with epoxy resin,but the disadvantage was that it occupied a large area.Furthermore,by optimizing the device structure and using indium column interconnection,the pixel

关 键 词：INGAAS 单光子探测器 雪崩焦平面 三维激光成像 激光通信 

分 类 号：O472.4[理学—半导体物理]