碲镉汞线性雪崩焦平面器件评价及其应用(特邀)  

Evaluation and application of HgCdTe linear avalanche focal plane devices(invited)

作　　者：张应旭 陈虓[1] 李立华[1] 赵鹏[1] 赵俊[1] 班雪峰 李红福 龚晓丹[1] 孔金丞[1] 郭建华[1] 李雄军[1] Zhang Yingxu;Chen Xiao;Li Lihua;Zhao Peng;Zhao Jun;Ban Xuefeng;Li Hongfu;Gong Xiaodan;Kong Jincheng;Guo Jianhua;Li Xiongjun(Kunming Institute of Physics,Kunming 650223,China)

机构地区：[1]昆明物理研究所,云南昆明650223

出　　处：《红外与激光工程》2023年第3期52-63,共12页Infrared and Laser Engineering

摘　　要：碲镉汞线性雪崩焦平面探测器具有高增益、高带宽及低过剩噪声等特点,在航空航天、天文观测、军事装备及地质勘探等领域展现了巨大的应用潜力。目前,国内已经开展了碲镉汞线性雪崩焦平面器件的研制工作,但缺乏评价其性能的方法及标准,同时对其的应用仍然处于探索阶段。首先分析了表征线性雪崩焦平面器件性能的关键参数,同时基于碲镉汞线性雪崩焦平面器件的特点,探讨了雪崩焦平面器件在主/被动红外成像、快速红外成像等领域的应用,最后对碲镉汞雪崩焦平面器件的未来发展进行了展望。Significance The HgCdTe linear avalanche focal plane detector has the characteristics of high gain,high bandwidth and low excess noise,and has shown great application potential in the field of aerospace,astronomical observation,military equipment and geological exploration.Based on their own HgCdTe infrared FPA detector technology,Leonardo,Raytheon,DRS and Sofradir have developed HgCdTe APD focal plane devices.The demonstration of active gating imaging,active/passive dual-mode imaging and 3D imaging have been completed,showing attractive application prospect of HgCdTe APD.However,the research on HgCdTe APD detector technology is still at the initial stage in China,and its application is still in the exploration stage due to the lack of evaluation method.Progress The parameters of the HgCdTe infrared focal plane array cannot completely cover the characterization of HgCdTe APD.According to the characteristics and application requirements of HgCdTe APD,in order to accurately characterize the performance of HgCdTe APD focal plane devices,it is necessary to introduce parameters such as gain,excess noise factor,noise equivalent photon number and time resolution.The gain of the APD is used to measure the amplification ability to the input,which is defined as the ratio of the response of the device with gain to the response without gain.The test method of the gain is given and the gain for an APD FPA prepared by Kunming Institute of Physics is shown(Fig.1,Fig.2).The average gain of the APD FPA has an exponential relationship with the bias.When the bias is−8 V,the gain of the FPA is 166 and the gain nonuniformity does not exceed 3.4%.The randomness of the carrier multiplication of the APD introduces excess noise,which makes the SNR of the output deteriorate when the input is amplified.Usually,excess noise factor is used to describe the deterioration of SNR,which can be calculated by the ratio of the device output SNR without gain to the device output SNR with gain.It's worth noting that the conditions need to be consist

关 键 词：碲镉汞 APD 性能评价 主被动双模成像 快速红外成像 

分 类 号：TN215[电子电信—物理电子学]