(100)与(111)晶面硅基金属整片键合后选择性去衬底技术  

(100) and(111) Selective De-substrate Technology after Whole-sheet Bonding of Silicon-based Metals

作　　者：杜佳怡 聂君扬 孙捷 林畅 吴大磊 杨天溪 黄忠航 严群 DU Jiayi;NIE Junyang;SUN Jie;LIN Chang;WU Dalei;YANG Tianxi;HUANG Zhonghang;YAN Qun(National and Local United Engineering Laboratory of Flat Panel Display Technology,Fuzhou University,and Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China,Fuzhou 350100,CHN;Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China,Fuzhou 350100,CHN;Quantum Device Physics Laboratory,Chalmers University of Technology,Goteborg 41296,Sweden;Faculty of Electronic and Information Engineering,Xi'an Jiaotong University,Xi'an710049,CHN)

机构地区：[1]福州大学,平板显示技术国家地方联合工程实验室,中国福建光电信息科学与技术创新实验室,福州35000 [2]中国福建光电信息科学与技术创新实验室,福州350100 [3]瑞典查尔摩斯理工大学,量子器件物理实验室,哥德堡41296 [4]西安交通大学,电信学部,西安71009

出　　处：《光电子技术》2023年第1期1-6,共6页Optoelectronic Technology

基　　金：福建省科技厅项目(2021HZ0114,2021J01583,2021L3004);中国福建光电信息科学与技术创新实验室项目(2021ZZ122)。

摘　　要：采用硅基金属整片键合后选择性去衬底技术,通过热压键合技术将(100)晶面硅与(111)晶面硅高温键合,利用聚二甲基硅氧烷保护(100)晶面硅衬底,再粗化(111)晶面硅衬底加快其刻蚀速率,后通过湿法选择性刻蚀去除(111)晶面硅衬底。此技术在不损伤硅基驱动芯片的前提下实现了选择性去除硅基氮化镓外延衬底,是一种材料混合集成的新技术,有望应用于自对准硅基Micro-LED微显示器件制程和光电子器件集成领域。In this paper, the selective substrate removal technology after the silicon-based metal monolithic bonding was used. The(100) crystalline silicon was bonded to(111) crystalline silicon at high temperature by hot-pressure bonding technology. The(100) crystalline silicon substrate was protected by polydimethylsiloxane(PDMS). Then, the(111) crystalline silicon substrate was roughened to accelerate the etching rate. Finally, the(111) crystalline silicon substrate was removed by the wet selective etching. The(111) crystalline silicon substrate of GaN epitaxial substrates was selectively removed with saving the Si-based driver chip. It is a new technology for the mixing and integration of material. It is expected to be applied in the manufacturing process of self-aligned silicon-based micro-LED microdisplay devices and optoelectronic device integration.

关 键 词：硅基微米级发光二极管 巨量转移 硅基互补金属氧化物半导体 热压键合 选择性刻蚀 

分 类 号：TN305[电子电信—物理电子学] O711[理学—晶体学]