AlGaN/GaN HEMTs器件中子辐照效应实验和数值模拟研究  

Experimental Study and Numerical Simulation of Neutron Irradiation Effects on AlGaN/GaN HEMTs

作　　者：陈泉佑 赵景涛 朱小锋[1] 许献国[1] 熊涔 赵洪超[1] CHEN Quanyou;ZHAO Jingtao;ZHU Xiaofeng;XU Xianguo;XIONG Cen;ZHAO Hongchao(Institute of Electronic Engineering,China Academy of Engineering Physics Mianyang,Sichuan Province 621999,China;Institute of Applied Electronics,China Academy of Engineering Physics,Mianyang,Sichuan Province 621999,China)

机构地区：[1]中国工程物理研究院电子工程研究所,四川绵阳621999 [2]中国工程物理研究院应用电子学研究所,四川绵阳621999

出　　处：《现代应用物理》2023年第1期164-172,199,共10页Modern Applied Physics

基　　金：国家自然科学基金资助项目(11705172;61701461)。

摘　　要：以定制硅(Si)、蓝宝石(Al2O3)和碳化硅(SiC)衬底的AlGaN/GaN高电子迁移率晶体管(high electron mobility transistors,HEMTs)为研究对象,在CFBR-II(China Fast Burst Reactor-II)快中子脉冲堆开展了中子辐照注量范围为10^(13)~10^(15) cm^(-2)的辐照实验研究;运用Sentaurus TCAD软件对Si衬底HEMTs器件开展了数值模拟仿真。结果表明:HEMTs器件的I-V等特性的变化,随着中子辐照注量的增大,并未如预期呈现出单调的线性递减趋势;对于Si衬底的定制器件,在小于10^(15) cm^(-2)的辐照注量下,甚至出现了饱和漏电流增加现象。分析认为,辐照产生的施主型陷阱与受主型陷阱之间的竞争补偿作用过程,是导致实验现象出现的主要物理机制;与原生缺陷相关的施主型陷阱的产生和注量率效应,可用来解释实验观测到的反常增加趋势。基于不同种类陷阱对器件作用机制的定量分析,定位GaN缓冲层为器件的薄弱环节并提出了加固建议,推断器件性能会在注量为10^(15)~10^(16) cm^(-2)时出现显著退化及失效,并尝试开展多轮次搭载实验进行验证。The fabricated AlGaN/GaN high electron mobility transistors(HEMTs)grown on Si,sapphire(Al 2O 3)and SiC substrate were exposed to China Fast Burst Reactor-II neutrons with several fluencies from 1013 cm^(-2) to 1015 cm^(-2).And the performance of the devices on Si substrate was numerically simulated with Sentaurus TCAD.It was found that the magnitude of the changes in the I-V characteristics did not exhibit a monotonically linear variation with increasing fluence.For the devices on Si substrate,even an increase in drain current was observed for neutron fluence less than 1015 cm^(-2).The possible mechanism responsible for the phenomena was attributed to the contribution of donor-like traps which may have respect to the native defects or impurities,and the non-monotonic variation may be explained by the dose rate effect.By quantitatively analyzing the impacts of different traps on devices,we considered the GaN buffer layer is the weak link of the device and proposed a possible hardening means,and it was deduced that the device performance would degrade significantly and fail in the fluences range from 10^(15) cm^(-2) to 10^(16) cm^(-2),which could be verified by multiple rounds of incidental experiments.

关 键 词：ALGAN/GAN高电子迁移率晶体管 中子辐照 实验 数值模拟 陷阱 

分 类 号：TL99[核科学技术—核技术及应用] TN386[电子电信—物理电子学]