退火参数对磁控溅射Al_(2)O_(3)介质电学性能的影响  

Effects of Annealing Parameters on Electrical Properties of Al_(2)O_(3)Dielectric by Magnetron Sputtering

作　　者：苏佳乐 李冲 秦世宏 何晓颖 SU Jiale;LI Chong;QIN Shihong;HE Xiaoying(School of Information,Beijing University of Technology,Beijing 100124,China;School of Electronic Engineering,State Key Laboratory of Information Photonics and Optical Communications,Beijing University of Posts and Telecommunications,Beijing 100876,China;Beijing Key Laboratory of Work Safety Intelligent Monitoring,Beijing University of Posts and Telecommunications,Beijing 100876,China)

机构地区：[1]北京工业大学信息学部,北京100124 [2]北京邮电大学、电子工程学院、信息光子学与光通信国家重点实验室,北京100876 [3]北京邮电大学、安全生产智能监控北京市重点实验室,北京100876

出　　处：《热加工工艺》2023年第4期125-128,138,共5页Hot Working Technology

基　　金：国家自然科学基金项目(61675046);中央高校基本科研专项资金项目(2019PTB-006);信息光子学与光通信国家重点实验室项目(IPOC2017B011)。

摘　　要：氧化铝作为一种可以应用于高密度MIM电容器的高k材料,具有很大的禁带宽度和良好的热稳定性,可以有效减小漏电流。采用磁控溅射法制备了氧化铝薄膜,并对不同气氛和温度下退火的氧化铝薄膜进行了漏电和电容测试,分析和研究了影响磁控溅射氧化铝薄膜质量的因素。结果表明,退火后氧化铝薄膜的漏电减小,而且试样在氧气条件下退火的电学性能优于氮气条件。经过250℃氮气退火的试样漏电减小,5 V下漏电为9 nA左右,电容波动在10^(-1) pF量级。而经过250℃氧气退火后的试样,5 V下漏电仅为0.3 nA,且电容波动较小(~0.03 pF)。As a high k material that can be applied to high-density MIM capacitors,Al_(2)O_(3) has a large band gap and good thermal stability,which can effectively reduce the leakage current.Al_(2)O_(3) thin film was prepared by magnetron sputtering,and the leakage current and capacitance of Al_(2)O_(3) thin film were measured under different atmosphere and temperatures,the factors that influence the quality of Al_(2)O_(3) thin film by magnetron sputtering were analyzed and studied.The results show that the leakage current of Al_(2)O_(3) thin films decreases after annealing,and the dielectric properties of samples annealed under oxygen conditions are better than those under nitrogen conditions.After 250℃nitrogen annealing,the leakage current of the sample is reduced.The leakage current is about 9 nA at 5 V,and the capacitance fluctuations in the order of 10^(-1) pF.The leakage current of samples is only 0.3 nA at 5 V and the capacitance fluctuations is small(~0.03 pF)by oxygen annealing at 250℃.

关 键 词：退火 磁控溅射 氧化铝 高K材料 电学性能 

分 类 号：TG156.2[金属学及工艺—热处理] TG174.444[金属学及工艺—金属学]