磁控溅射制备取向性BaTiO_(3)薄膜及其性能研究  

Preparation and Properties of Oriented BaTiO_(3) Thin Films by Magnetron Sputtering

作　　者：姚明刚 王玺 李斌 程亚亚 张春海 YAO Minggang;WANG Xi;LI Bin;CHENG Yaya;ZHANG Chunhai(Shaanxi Aerospace Navigation Equipment Co.,Ltd,Baoji 721000,Shanxi,China)

机构地区：[1]陕西航天时代导航设备有限公司,陕西宝鸡721000

出　　处：《真空与低温》2023年第3期232-236,共5页Vacuum and Cryogenics

摘　　要：磁控溅射具有制备的薄膜纯度高、致密性好、均匀,膜-基结合牢固、工艺重复性好,适合制备取向性无机非金属薄膜等优点,在微电子领域具有广泛的应用前景。研究了BaTiO_(3)薄膜沉积过程中的氩氧比、溅射温度、溅射时间、溅射功率等参数对薄膜微观结构的影响。结果表明,以取向性SrTiO_(3)为基底,当氩氧比为3∶1,基底温度为750℃,沉积时间为90 min,溅射功率为80 W时能够获得结晶较好、表面光滑、界面平整,厚度约为177 nm的(100)取向性BaTiO_(3)薄膜。通过优化工艺参数可以提高薄膜的质量和性能,为利用磁控溅射技术制备性能优异的压电薄膜奠定了基础。Magnetron sputtering have the advantages of high purity,high compactness,good uniformity,high bonding strength between film and substrate,and good repeatability of sputtering process.It has a wide application prospect in the field of microelectronics.In order to explore the relationship between the process parameters and the quality of the film,the argon-oxygen ratio,sputtering temperature,sputtering time,sputtering power and other parameters during the deposition of BaTiO_(3) thin films were studied.The results show that the orientated(100)BaTiO_(3) with good crystllization,smooth surface,flat interface and thickness of about 177 nm can be obtained by using the oriented SrTiO_(3) as substrate,with argon-oxygen ratio of 3∶1,the deposition temperature of 750℃,the deposition time of 90 min,and the sputtering power of 80 W.This research confirms that the quality and performance of the films can be improved by optimizing the process parameters,which lays a foundation for the preparation of piezoelectric films with excellent properties by magnetron sputtering technology.

关 键 词：磁控溅射 工艺参数 陶瓷靶材 BaTiO_(3)取向性薄膜 

分 类 号：O484[理学—固体物理] TG174.444[理学—物理]