光刻机镜头漏光对光刻工艺的影响  

Impact of Lithography Lens Leakage on Lithography Process

作　　者：梁宗文 石浩 王雯洁 王溯源 章军云[1] LIANG Zongwen;SHI Hao;WANG Wenjie;WANG Suyuan;ZHANG Junyun(Nanjing Electronic Devices Institute,Nanjing 210016,China)

机构地区：[1]南京电子器件研究所,南京210016

出　　处：《电子与封装》2023年第4期65-68,共4页Electronics & Packaging

摘　　要：通过GaAs单片微波集成电路(MMIC)光刻工艺,试验得到不同掩模版透光区占空比下光刻机镜头的漏光率,分析了漏光率对曝光能量宽裕度以及光刻胶形状的影响。通过试验测量得出,掩模版透光区占空比的增加会导致曝光镜头的漏光率升高,进一步使得光刻工艺的能量宽裕度变小。同时,过高的漏光率会造成显影后图形的光刻胶损失,使光刻胶图形的对比度变差,从而严重影响GaAs MMIC光刻工艺的图形质量,造成器件性能退化,降低产品良率。Lithography lens leakage rates under different mask opening ratios are obtained through GaAs MMIC lithography process,and the impact of leakage rate on exposure energy margin and photoresist shape is analyzed.The experimental results show that the increase of the duty ratios of the mask’s transmission zone will lead to the increase of the leakage rates of the exposure lens,and further reduce the energy margin of the lithography process.Meanwhile,high light leakage rates will cause the loss of photoresist of the graphics after image develop and make the contrast of the photoresist graphics deteriorate,which will seriously affect the graphics quality of GaAs MMIC lithography process,result in device performance degradation and reduce product yield.

关 键 词：365 nm步进式光刻机 漏光 掩模版 GaAs单片微波集成电路 

分 类 号：TN305.7[电子电信—物理电子学]