DC~70 GHz GaAs超宽带放大器MMIC  

DC-70 GHz GaAs Ultra-Wideband Amplifier MMIC

作　　者：冯晓冬 何美林 冯彬 柳林 刘亚男 Feng Xiaodong;He Meilin;Feng Bin;Liu Lin;Liu Yanan(Hebei Xiongan Taixin Electronics Technology Co.,Ltd.,Shijiazhuang 050051,China)

机构地区：[1]河北雄安太芯电子科技有限公司,石家庄050051

出　　处：《半导体技术》2023年第4期318-323,共6页Semiconductor Technology

摘　　要：基于90 nm GaAs赝配高电子迁移率晶体管(PHEMT)工艺研制了一款DC~70 GHz超宽带放大器单片微波集成电路(MMIC)。采用6级共源共栅结构,拓展了超宽带放大器MMIC的带宽,提高了其增益。在共源共栅PHEMT之间引入一条调谐微带线作为调谐电感,改善了超宽带放大器MMIC的增益平坦度。在片测试结果表明,该放大器MMIC在DC~70 GHz内,小信号增益大于8.3 dB,增益平坦度典型值为±1 dB,饱和输出功率大于13 dBm。在50 GHz以下噪声系数小于5 dB,在70 GHz的噪声系数为8.5 dB。该放大器MMIC的工作电压为8 V,电流为70 mA,包含射频压点与直流压点的芯片尺寸为1.39 mm×1.11 mm。Based on 90 nm GaAs pseudomorphic high electron mobility transistor(PHEMT)technology,a DC-70 GHz ultra-wideband(UWB)monolithic microwave integrated circuit(MMIC)was developed.The 6-stage cascode structure was adopted,accordingly the bandwidth of the ultra-wideband amplifier MMIC was extended and the gain was improved.A tuning microstrip line as tuning inductance was introduced between cascade PHEMTs to improve the gain flatness of the ultra-wideband amplifier MMIC.The on-chip test results show that in the frequency range of DC-70 GHz the amplifier MMIC has a small signal gain of more than 8.3 dB,a typical value of gain flatness of±1 dB and a saturated output power of more than 13 dBm.The noise figure is less than 5 dB below 50 GHz,and is 8.5 dB at 70 GHz.The amplifier MMIC operates at 8 V with 70 mA current.The chip size with RF pad and DC pad is 1.39 mm×1.11 mm.

关 键 词：GAAS 单片微波集成电路(MMIC) 超宽带(UWB) 放大器 共源共栅 

分 类 号：TN722.16[电子电信—电路与系统] TN43