具有界面依赖光致发光的双层WS_(2)/Ga_(2)O_(3)异质结的能带工程  

Band alignment engineering of bilayer WS_(2)/Ga2O_(3)heterostructures with interface-dependent photoluminescence

作　　者：杨万丽 黄田田 张乐鹏 徐沛然 姜聪 李天信[1] 陈志民[3] 陈鑫[1,2,4] 戴宁 YANG Wan-Li;HUANG Tian-Tian;ZHANG Le-Peng;XU Pei-Ran;JIANG Cong;LI Tian-Xin;CHEN Zhi-Min;CHEN Xin;DAI Ning(State Key Laboratory of Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China;Hangzhou Institute for Advanced Study,University of Chinese Academy of Sciences,Hangzhou 310024,China;College of Materials Science and Engineering,Zhengzhou University,Zhengzhou 450052,China;University of Chinese Academy of Sciences,Beijing 100049,China)

机构地区：[1]中国科学院上海技术物理研究所红外物理国家重点实验室,上海200083 [2]国科大杭州高等研究院,浙江杭州310024 [3]郑州大学材料科学与工程学院,河南郑州450052 [4]中国科学院大学,北京100049

出　　处：《红外与毫米波学报》2023年第2期162-168,共7页Journal of Infrared and Millimeter Waves

基　　金：Supported by National Natural Science Foundation of China(92064014,11933006);Science and Technology Commission of Shanghai Municipality(18J1414900);Youth Innovation Promotion Association CAS。

摘　　要：利用垂直WS_(2)/Ga_(2)O_(3)异质结构中异质界面诱导了反常的光致发光(PL)发射。垂直堆栈的WS_(2)/Ga_(2)O_(3)异质界面使其形成了II型能带结构,导致与Ga_(2)O_(3)层接触的底层WS_(2)的PL强度下降。而异质界面的强耦合作用也影响了双层WS_(2)中的同质层间相互作用,使得上层WS_(2)出现反常的PL增强。这种堆栈新型二维异质结构为定制目标能带结构并控制其光子和电子行为提供一种新的手段。The hetero-interface induced anomalous photoluminescence(PL)emissions in the vertical WS_(2)/Ga_(2)O_(3)heterostructures was demonstrated.The WS_(2)/Ga_(2)O_(3)hetero-interface varies type-II band structure and brings subsequent PL decline in the bottom WS_(2)monolayer contacted with Ga_(2)O_(3)layer.Such hetero-interlayer coupling interaction between oxides and 2D layered transition metal dichalcogenides(TMDs)in the stacked heterostruc⁃tures impacts interlayer interaction between the bottom WS_(2)monolayer and the upper WS_(2)monolayer in a WS_(2)bi⁃layer,which leads to an anomalous PL enhancement in the bilayer WS_(2).Stacked hetero-interface will benefit for controlling the optical or electronic behavior and modulating energy band structures by customizing transformative 2D heterostructures used in next-generation nanoscale optoelectronic detectors and photodetectors.

关 键 词：二硫化钨 氧化镓 异质结 界面 光致发光 

分 类 号：O472.3[理学—半导体物理]