一种新型抗SEU的SRAM单元结构设计  

Design of a New SEU-tolerant SRAM Cell Structure

作　　者：常泽光 秦家军 赵雷 宋春晓[1,3] 李力 安琪 Zeguang CHANG;Jiajun QIN;Lei ZHAO;Chunxiao SONG;Li LI;Qi AN(State Key Laboratory of Particle Detection and Electronics,University of Science and Technology of China,Hefei 230026,China;School of Microelectronics,University of Science and Technology of China,Hefei 230026,China;Department of Modern Physics,University of Science and Technology of China,Hefei 230026,China)

机构地区：[1]中国科学技术大学核探测与核电子学国家重点实验室,合肥230026 [2]中国科学技术大学微电子学院,合肥230026 [3]中国科学技术大学近代物理系,合肥230026

出　　处：《原子核物理评论》2023年第1期78-85,共8页Nuclear Physics Review

基　　金：国家重点研发计划资助项目(2020YFE0202002);中国科学院青年创新促进会资助项目;中央高校基本科研业务费专项资金资助项目(WK2030000051);核探测与核电子学国家重点实验室资助项目(SKLPDE-ZZ-202121)。

摘　　要：在加速器粒子物理实验中,基于专用集成电路(Application Specific Integrated Circuit,ASIC)在读出电子学前端实现模拟信号调理、数字化等功能是一个发展趋势,但这也使得ASIC暴露在了高能粒子辐射环境中,而其中的静态随机存储器(Static Random-Access Memory,SRAM)容易受到辐射的影响产生单粒子翻转(Single Event Upset,SEU),从而使芯片工作异常。因此对ASIC中的SRAM进行抗辐照加固设计十分必要。本工作提出了一种基于施密特触发器结构的11管抗SEU SRAM存储单元,并在180 nm CMOS工艺下进行了电路的设计和仿真,仿真结果表明,与传统12管SRAM单元相比,抗单粒子翻转能力有明显增加,且功耗仅为12管单元的42%。In accelerator particle physics experiments,it is a development trend to realize the functions of analog signal processing and digitization at the front end of readout electronics based on application specific integrated circuits(ASICs),but it also exposes ASICs in the radiation environment of high-energy particles,The static random access memory(SRAM)is vulnerable to radiation,resulting in single event upset(SEU),which makes the chip abnormal.Therefore,it is necessary to design radiation-hardened SRAM in those ASICs.In this paper,a SEU-tolerant SRAM memory cell with 11 transistors(11 T)based on Schmitt trigger is proposed.The circuit is designed and simulated in 180 nm CMOS process.The simulation results show that our proposed 11 T SRAM cells as compared with traditional 12 transistors(12 T)SRAM cell have considerably higher robustness against single-event multiple effects,and consumes only 42%power of the 12 T cell.

关 键 词：SRAM单元 SEU ASIC 抗辐照 

分 类 号：TP492[自动化与计算机技术]