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作 者:李远洁[1,2] 朱瑄 赵玉清[1] LI Yuanjie;ZHU Xuan;ZHAO Yuqing(Department of Electronic Science and Engineering,University of Xi’an Jiaotong University,Xi’an 710049,China;Shenzhen Academy of Xi’an Jiaotong University,Shenzhen 518057,China;State Key Laboratory for Manufacturing Systems Engineering,University of Xi’an Jiaotong University,Xi’an 710054,China)
机构地区:[1]西安交通大学电子科学与工程学院,西安710049 [2]西安交通大学深圳研究院,深圳518057 [3]西安交通大学机械制造系统工程国家重点实验室,西安710054
出 处:《真空科学与技术学报》2023年第3期245-251,共7页Chinese Journal of Vacuum Science and Technology
基 金:深圳市科技计划基础研究项目(JCYJ20180306170801080)。
摘 要:本文利用射频磁控溅射薄膜沉积技术在柔性聚酰亚胺(PI)、氧化铟锡(ITO)玻璃及石英玻璃衬底上制备了透明硫化锌(ZnS)薄膜。通过改变生长过程中的衬底温度,全面系统地研究了衬底温度对柔性和刚性ZnS薄膜的晶体结构、光透过率、光学常数以及表面性能影响的规律。研究表明升高衬底温度有利于形成ZnS薄膜(111)晶面的择优取向生长。不同衬底温度条件下制备的柔性和刚性ZnS薄膜在可见光波长范围内的平均光透过率均大于80%;在红外波长范围的平均光透过率达到85%。柔性ZnS薄膜在400 nm-890 nm波长范围内的光学折射率为2.21-2.56。刚性ZnS薄膜的光学折射率随着衬底温度的升高有所增加,当衬底温度为300℃时,刚性ZnS薄膜在890 nm波长处的折射率达到2.26。柔性ZnS薄膜厚度及表面粗糙度均随着衬底温度的升高而降低,当衬底温度为300℃时,柔性ZnS薄膜表面均方根粗糙度达到最小值2.99 nm。为实现高性能柔性ZnS光电器件,应控制生长柔性ZnS薄膜的衬底温度在200℃-300℃,以获得最优化的器件性能。Transparent zinc sulfide(ZnS)thin films were deposited on flexible polyimide(PI),In-doped SnO2(ITO)coated glass,and quartz glass substrates by radio frequency(RF)magnetron sputtering at different substrate temperatures.The effects of substrate temperatures on the crystal structure,optical transmittance,refractive index,and surface morphology properties of ZnS films have been systematically studied.The films showed preferential growth of ZnS(111)crystal plane with increasing substrate temperature.The average optical transmittance of the flexible and rigid ZnS films is above 80%and 85%in the visible and infrared spectral range,respectively.The refractive index of the flexible ZnS films is 2.21−2.56 in the 400 nm−890 nm wavelength range.In addition,the refractive index of the rigid ZnS films deposited at 300℃is 2.26 at 890 nm wavelength.The surface roughness and film thickness of the flexible ZnS films decreased with increasing substrate temperature,reaching a minimum of 2.99 nm at 300℃.The optimum substrate temperature for the flexible ZnS films is 200℃−300℃to obtain the optimized performance of ZnS-based flexible optoelectronic devices.
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