hBN栅绝缘介质石墨烯射频场效应管建模与性能研究  

Modeling and performance of graphene RF FET with hBN gate insulating medium

作　　者：王进军[1] 白斌辉 徐晨昱 杨嘉伦 刘宇[1] WANG Jinjun;BAI Binhui;XU Chenyu;YANG Jialun;LIU Yu(School of Electronic Information and Artificial Intelligence,Shaanxi University of Science&Technology,Xi􀆳an 710021,China)

机构地区：[1]陕西科技大学电子信息与人工智能学院,陕西西安710021

出　　处：《电子元件与材料》2023年第4期445-450,共6页Electronic Components And Materials

基　　金：2018年度陕西省教育厅科研计划项目(18JK0103)。

摘　　要：具有原子级平滑表面的hBN(六方氮化硼)不仅与石墨烯有相同的二维平面结构,而且还有许多相似的特性,采用hBN作为栅绝缘介质,有望可以提升石墨烯射频场效应管的性能。为了研究hBN栅绝缘介质石墨烯射频场效应管的射频特性,基于SILVACO TCAD软件进行了hBN栅绝缘介质石墨烯射频场效应管结构建模,通过数值计算对器件的转移特性、输出特性、电容特性以及射频特性进行了模拟计算。结果表明:器件的特征频率fT(单位增益带宽)高达58.79 GHz、最大振荡频率fMAX高达75.58 GHz、单位长度栅电容CGC小于7.5×10^(-16)F/μm,阈值电压为0.38 V。研究结果对hBN栅绝缘介质石墨烯射频场效应管的开发、设计具有重要的参考价值。The hBN(hexagonal boron nitride)with atomic level smooth surface has not only the same two-dimensional plane structure as graphene,but also many similar characteristics.Using hBN as the gate insulating medium is expected to improve the performance of graphene RF FET.In order to investigate the RF characteristics of hBN grid dielectric graphene RF FET,the structure modeling of hBN grid dielectric graphene RF FET was carried out with SILVACO TCAD software.The transfer characteristics,output characteristics,capacitance characteristics and RF characteristics of the device were simulated by the numerical calculation.The results show that the characteristic frequency(unit gain bandwidth)fT is as high as 58.79 GHz,the maximum oscillation frequency fMAX is as high as 75.58 GHz,the gate capacitance CGC per unit length is less than 7.5×10^(-16) F/μm,and the threshold voltage is 0.38 V.

关 键 词：石墨烯 六方氮化硼 场效应晶体管 射频特性 TCAD 

分 类 号：TN386.2[电子电信—物理电子学]