应变平衡超晶格改善GaAs/Si(001)表面研究  

Investigation of Surface Improvement of GaAs/Si(001)with Strain Balanced Superlattice

作　　者：李家琛 王俊[1] 肖春阳 王海静 贾艳星 刘倬良 马博杰 明蕊 葛庆 翟浩 林枫[1] 何玮钰 黄永清[1] 任晓敏[1] Li Jiachen;Wang Jun;Xiao Chunyang;Wang Haijing;Jia Yanxing;Liu Zhuoliang;Ma Bojie;Ming Rui;Ge Qing;Zhai Hao;Lin Feng;He Weiyu;Huang Yongqing;Ren Xiaomin(State Key Laboratory of Information Photonics and Optical Communications,Beijing University of Posts and Telecommunications,Beijing 100876,China)

机构地区：[1]北京邮电大学信息光子学与光通信国家重点实验室,北京100876

出　　处：《中国激光》2023年第6期30-37,共8页Chinese Journal of Lasers

基　　金：国家自然科学基金(61874148);国家重点研发计划重点专项课题(2018YFB2200104);北京市科技计划课题(Z191100004819012);国家创新研究群体科学基金(62021005);高等学校学科创新引智计划(111计划)(BP0719012)。

摘　　要：本文提出了一种有效改善GaAs/Si(001)材料表面形貌和晶体质量的应变平衡超晶格结构及其制备方案。在无偏角Si(001)衬底上,采用金属有机化学气相沉积技术生长了具有应变平衡超晶格结构的GaAs外延层,并在相同条件下仅生长了GaAs外延层作为比较。采用原子力显微镜、光致荧光光谱仪和双晶X射线衍射仪对两种样品进行表征与测试。测试结果表明:与未采用该方案生长的样品相比,采用应变平衡超晶格结构方案生长的样品的均方根表面粗糙度由1.92 nm(10μm×10μm)降至1.16 nm(10μm×10μm),光致荧光光谱峰值强度提高5倍以上,光致荧光光谱峰值半峰全宽从31.6 nm降为23.4 nm,XRD曲线峰值半峰全宽降低了30.4%,X射线衍射峰值强度提升了472.2%。该方案可显著改善GaAs/Si(001)材料的表面形貌及晶体质量,对制备硅基电子和光电子器件具有重要意义。Objective To realize a silicon-based photonic integrated chip circuit,we perform epitaxial deposition of GaAs material on a silicon substrate and subsequently prepare a silicon-based light source.However,there is a 4.1%lattice mismatch between Si and GaAs,resulting in three-dimensional(3D)growth of the material and formation of several 3D island structures in the initial growth stage of GaAs/Si(001),deteriorating its surface morphology.The roughness in the initial growth stage is difficult to reduce to an ideal level,which significantly affects the crystal quality of subsequent growth materials and leads to the failure of the overall preparation process of the device.Currently,the main solutions for reducing the surface roughness of GaAs/Si(001)materials are chemical mechanical polishing(CMP)and the growth of strained-layer superlattice(SLS).Because the epitaxial layer is too thin to be cleaned using the CMP technology,the possibility of polishing the epitaxial layer cannot be increased because of the complexity of epitaxial layer preparation.Therefore,the SLS growth technology has become the primary choice for improving the surface morphology of epitaxial materials.Generally,the SLS growth technology used in previous study matches the lattice of epitaxial materials,and its strain is significantly less than that of the SLS used as a dislocation filter layer.Therefore,it can only improve the surface morphology;however,it cannot reduce the material defects and improve the crystal quality.Therefore,it is necessary to use a dislocation filter layer to improve the crystal quality of GaAs/Si(001).In this study,the preparation technology of a strain-balanced superlattice structure that combines tensile and compressive strains is proposed.This technique can not only effectively improve the surface roughness of GaAs/Si(001)materials but also reduce material defects and enhance the crystal quality in the traditional dislocation filter layer.This not only simplifies the growth and preparation process of GaAs/Si(001)but also

关 键 词：材料 硅基砷化镓材料 表面粗糙度 应变平衡超晶格 金属有机化学气相沉积 

分 类 号：O471.4[理学—半导体物理]