射频三维微纳集成技术  

RF 3D Micro-nano Integration Technology

作　　者：朱健[1,2] 郁元卫 刘鹏飞[1] 黄旼 陈辰 ZHU Jian;YU Yuanwei;LIU Pengfei;HUANG Min;CHEN Chen(Nanjing Electronic Devices Institute,Nanjing,210016,CHN;National Key Laboratory of Solid-state Microwave Devices and Circuits,Nanjing,210016,CHN)

机构地区：[1]南京电子器件研究所,南京210016 [2]固态微波器件与电路全国重点实验室,南京210016

出　　处：《固体电子学研究与进展》2023年第2期101-107,120,共8页Research & Progress of SSE

摘　　要：后摩尔时代,半导体技术的发展主要有延续摩尔(More Moore)和超越摩尔(More than Moore)两条路径,延续摩尔通过新材料新范式,沿着摩尔定律进一步将线宽逐渐微缩至3 nm甚至进入埃(A)量级,超越摩尔则是采用异质异构三维微纳集成的途径来满足下一代电子高速低功耗高性能的需求。异质异构集成可以充分利用不同材料的半导体特性使得系统性能最优化。射频三维微纳集成技术推动高频微电子从平面二维向三维技术突破,成为后摩尔时代高频微电子发展的重要途经。射频三维微纳异质异构集成技术利用硅基加工精度高、批次一致性好、可以多层立体堆叠等特点,不断推动无源器件微型化、射频模组芯片化、射频系统微型化技术发展。本文介绍了射频三维微纳技术发展趋势,并给出了国内外采用该技术开拓RF MEMS器件、RF MEMS模组以及三维射频微系统技术发展和应用案例。In the post-Moore era,the development of semiconductor technology relies mainly on two paths:More Moore and more than Moore.Using new processing and new material,more Moore is pushing the line width to 3 nm and even the order of angstroms.On the other hand,more than Moore uses heterogeneous three dimensional micro-nano integration to meet the needs of the next generation of high speed,low power,and high performance electronics.Heterogeneous integration takes advantage of properties of different materials to optimize system performance.RF integration technology promotes the breakthrough of high frequency microelectronics from planer 2D to 3D,and becomes an important way for the development of high frequency microelectronics in the post-Moore era.3D RF heterogeneous integration technology has all the benefits of Si-based fabrications,such as processing accuracy,good batch consistency,and wafer level stacking.Heterogeneous integration technology leads to the miniaturization of passive devices,chipization of RF module and miniaturization of RF systems.This paper introduces the development trend of RF three-dimensional micro-nano technology,and gives the development and application cases of RF MEMS devices,RF MEMS modules and three-dimensional RF micro-systems at home and abroad by using RF three-dimensional micro-nano integration technology.

关 键 词：射频MEMS 射频微系统 异构集成 三维集成 

分 类 号：TN305[电子电信—物理电子学] TN405TN454