大马士革工艺中电镀铜层杂质对其性能的影响  

Effects of impurities in electroplated copper film on its properties for damascene process

作　　者：孙红旗 王溯 于仙仙 马丽 SUN Hongqi;WANG Su;YU Xianxian;MA Li(Shanghai Sinyang Semiconductor Materials Co.,Ltd.,Shanghai 201616,China;Shanghai Key Laboratory of IC Process Materials,Shanghai 201616,China)

机构地区：[1]上海新阳半导体材料股份有限公司,上海201616 [2]上海市集成电路关键工艺材料重点实验室,上海201616

出　　处：《电镀与涂饰》2023年第9期40-44,共5页Electroplating & Finishing

摘　　要：分别采用聚醚胺类物质、聚乙烯亚胺类物质和聚酰胺类物质作为大马士革铜互连电镀工艺的整平剂,得到杂质含量不同的Cu膜层,通过计时电位测试分析了不同整平剂对膜层杂质含量的影响机制。研究了杂质含量对Cu膜层自退火速率、应力和电阻率的影响。结果表明,膜层中杂质含量过高会引起Cu膜层的电阻和应力升高。采用聚乙烯亚胺类物质或聚酰胺类物质作为整平剂时电镀所得Cu膜层的杂质含量都较低。Cu films with different mass fractions of impurities were obtained by damascene electroplating process for Cu interconnection with polyetheramine,polyethyleneimine,and polyamide as leveling agent respectively.The influencing mechanism of different leveling agents on the impurity content of Cu film was studied by chronopotentiometry.The effect of impurity content in Cu film on its self-annealing rate,stress,and resistivity was primarily studied.The results showed that the resistivity and stress of Cu film would be increased if its impurity content was too high.The impurity content of Cu film electrodeposited with polyethyleneimine or polyamide as leveling agent was relatively low.

关 键 词：大马士革工艺 电镀铜 整平剂 杂质 自退火 电阻率 应力 晶粒 

分 类 号：TQ153.14[化学工程—电化学工业]