一种高温度稳定性的GaN基准电压源设计  

Design of a GaN Reference Voltage Source with High Temperature Stability

作　　者：张黎莉 邱一武 殷亚楠 王韬 周昕杰[1] ZHANG Lili;QIU Yiwu;YIN Ya’nan;WANG Tao;ZHOU Xinjie(China Electronics Technology Group Corporation No.58 Research Institute,Wuxi 214035,China)

机构地区：[1]中国电子科技集团公司第五十八研究所,江苏无锡214035

出　　处：《电子与封装》2023年第5期51-57,共7页Electronics & Packaging

基　　金：江苏省自然科学基金(BK20211040)。

摘　　要：基于宽带隙、高饱和电子漂移速率、高击穿场强等材料特性优势,GaN高电子迁移率晶体管(HEMT)在高频大功率器件领域发展前景广阔。在集成电路中,基准电压源是为其他电路模块提供稳定参考电压的关键功能模块。基于0.5μm BCD GaN HEMT工艺,提出了一种GaN基准电压源的设计方案。Cadence Spectre仿真结果显示,该GaN基准电压源在-40~150℃范围内可实现2.04 V的稳定电压输出,温度系数为3.7×10^(-6)/℃。在室温27℃下,当电源电压由5 V增至20 V时,输出电压的线性灵敏度为0.13%/V。该GaN基准电压源具有高温度稳定性,后续可与不同的GaN基电路模块组合构成功能丰富的GaN基集成电路。Due to the advantages of wide bandgap,high saturated electron drift velocity,high breakdown field intensity and other material characteristics,GaN high electron mobility transistor(HEMT)in the field of high-frequency high-power devices has a broad development prospect.In integrated circuits,reference voltage source is a key module which generates a stable reference voltage for other circuit modules.A GaN reference voltage source based on 0.5μm BCD GaN HEMT process is proposed.Cadence Spectre simulation results show that the reference voltage source could generate a stable reference voltage of 2.04 V with a temperature coefficient of 3.7×10^(-6)/℃in the temperature range of-40-150℃.As the supply voltage increases from 5 V to 20 V at a room temperature of 27℃,the line sensitivity of the reference voltage is 0.13%/V.The GaN reference voltage source has high temperature stability,and can be combined with different GaN-based circuit modules to constitute functional GaN-based integrated circuits.

关 键 词：GaN HEMT 基准电压源 温度稳定性 

分 类 号：TN710.2[电子电信—电路与系统]