FBAR滤波器的底电极图形化工艺研究  

Study on the Bottom Electrode Graphic Technology of FBAR Filter

作　　者：倪烨 任秀娟 段英丽 张智欣 陈长娥 于海洋 孟腾飞 NI Ye;REN Xiujuan;DUAN Yingli;ZHANG Zhixin;CHEN Chang’e;YU Haiyang;MENG Tengfei(Beijing Institute of Radio Measurement,Beijing 100854,China)

机构地区：[1]北京无线电测量研究所,北京100854

出　　处：《电子与封装》2023年第5期85-88,共4页Electronics & Packaging

摘　　要：对薄膜体声波谐振器(FBAR)滤波器晶圆制造过程中的关键工艺——底电极图形化工艺进行了研究。通过优化光刻工艺中的焦面和曝光量,制作出了角度约为50°的胶图形;同时调整干法刻蚀设备的工艺参数,实现了角度为10.91°的底电极侧壁斜坡形貌结构,为FBAR滤波器的芯片制造工艺研究打下基础。The bottom electrode graphic technology,a key technology in wafer manufacturing process of the thin film bulk acoustic resonator(FBAR)filters,is studied.By optimizing the focal plane and exposure amount in the photolithography process,the glue figure with an angle of about 50°is produced.At the same time,the process parameters of the dry etching equipment are adjusted,and the slope structure of the bottom electrode sidewall with an angle of 10.91°are realized,which lays a foundation for the chip manufacturing process of the FBAR filters.

关 键 词：FBAR滤波器 晶圆制造 图形化 斜坡形貌 

分 类 号：TN305.7[电子电信—物理电子学]