三阱CMOS工艺单粒子闩锁研究  

Single Event Latch-up characterization investigation of Triple-well CMOS process

作　　者：沈丹丹 高国平[1] SHEN Dan-dan;GAO Guo-ping(The 58th Research Institute of China Electronics Technology Group Corporation)

机构地区：[1]中国电子科技集团公司第五十八研究所

出　　处：《中国集成电路》2023年第5期62-65,共4页China lntegrated Circuit

摘　　要：随着数模混合电路在无线应用领域的发展,三阱工艺噪声隔离优点引起设计师的广泛兴趣。RF技术必须把在P-衬底上的模拟、数字和RF电路进行隔离。本文主要讨论三阱(Triple-Well)工艺的电路单粒子闩锁问题。With the development of mixed-signal circuits in the wireless application field,the noise isolation advantages of Triple-Well technology have aroused the interest of designers.RF technology must isolate analog,digital,and RF circuits on a P-substrate.This article mainly discusses the single event latch-up problemin Triple-Well technology.

关 键 词：P-WELL Deep-NWELL 单粒子闩锁 可靠性 

分 类 号：TN303[电子电信—物理电子学]