衬底温度对氢化非晶氧化硅(i-a-SiO_(x):H)钝化性能的影响研究  

Effect of Substrate Temperature on Passivation Properties of Hydrogenated Amorphous Silicon Oxide(i-a-SiO_(x):H)

作　　者：何玉平[1] HE Yuping(School of Science,Nanchang Institute of Technology,Nanchang 330099,China)

机构地区：[1]南昌工程学院理学院,南昌330099

出　　处：《真空科学与技术学报》2023年第4期361-366,共6页Chinese Journal of Vacuum Science and Technology

基　　金：江西省教育厅科学技术项目(GJJ211925)。

摘　　要：本征氢化非晶氧化硅(i-a-SiO_(x):H)是a-Si:H/c-Si异质结太阳电池中重要的钝化材料之一。本文采用PECVD法研究不同沉积衬底温度下n-Cz-Si表面沉积i-a-SiO_(x):H的钝化性能,采用微波光电导(MW-PCD)和射频光电导(RF-PCD)两种方法测试硅片少子寿命,光谱型椭偏仪检验沉积薄膜的晶型。结果表明:(1)椭偏仪结果显示实验所沉积薄膜为所需非晶型;(2)MW-PCD与RF-PCD法测试均显示,n-Cz-Si双面室温(25℃)沉积i-a-SiO_(x):H后硅片少子寿命很低,随沉积衬底温度升高硅片少子寿命先增加后减少,25℃少子寿命最低,200℃~220℃(不同位置略有差别)少子寿命最高、钝化效果最优。Intrinsic hydrogenated amorphous silicon oxide(i-a-SiO_(x):H)is one of the important passivation materials in a-Si:H/c-Si heterojunction solar cells.In this paper,the passivation properties of i-a-SiO_(x):H deposited on the surface of n-Cz-Si at different substrate temperatures were studied by PECVD.The minority carrier lifetime of silicon wafers was measured by microwave photo-conductivity(MW-PCD)and radio frequency photoconductivity(RF-PCD).The crystal form of the deposited films was examined by spectroscopic ellipsometry.The results show that:(1)the ellipsometer results show that the deposited films are amorphous;(2)MW-PCD and RFPCD tests show that the minority carrier lifetime of the silicon wafer is very low after i-a-SiO_(x):H deposited on both sides of n-Cz-Si at room temperature.With the increase of deposition substrate temperature,the minority carrier lifetime of the silicon wafer increases first and then decreases,and the passivation effect is optimal at 200℃-220℃.

关 键 词：衬底温度 少子寿命 i-a-SiO_(x):H 钝化性能 椭偏仪 

分 类 号：O484[理学—固体物理]