具有单调组分渐变空穴存储层和对称组分渐变空穴阻挡层的深紫外激光二极管性能优化  

Optimization of Deep Ultraviolet Laser Diode with Monotonic Compositionally Graded Hole Reservoir Layer and Symmetric Compositionally Graded Hole Blocking Layer

作　　者：张傲翔 张鹏飞 贾李亚 Muhammad Nawaz Sharif 王芳[1,2] 刘玉怀 Zhang Aoxiang;Zhang Pengfei;Jia Liya;Muhammad Nawaz Sharif;Wang Fang;Liu Yuhuai(National Center for International Joint Research of Electronic Materials and Systems,School of Information Engineering,Zhengzhou University,Zhengzhou 450001,Henan,China;Zhengzhou Way Do Electronics Technology Co.,Ltd.,Zhengzhou 450001,Henan,China;Industrial Technology Research Institute Co.,Ltd.,Zhengzhou University,Zhengzhou 450001,Henan,China)

机构地区：[1]郑州大学信息工程学院电子材料与系统国际联合研究中心,河南郑州450001 [2]郑州唯独电子科技有限公司,河南郑州450001 [3]郑州大学产业技术研究院有限公司,河南郑州450001

出　　处：《激光与光电子学进展》2023年第7期281-287,共7页Laser & Optoelectronics Progress

基　　金：国家重点研发计划(2016YFE0118400);郑州市1125科技创新项目(ZZ2018-45);宁波市重大科技创新专项(2019B10129)。

摘　　要：为了优化深紫外激光二极管(DUV-LD)的电光转换效率与输出功率,提出了单调组分渐变空穴存储层(MCGHRL)和对称组分渐变空穴阻挡层(SCG-HBL)结构。使用Crosslight软件对采用基础结构、矩形空穴存储层(R-HRL)、MCG-HRL以及MCG-HRL和SCG-HBL的DUV-LD进行了仿真研究。结果表明,采用MCG-HRL和SCG-HBL能够更加有效地提升DUV-LD量子阱(QWs)内的空穴浓度,减少n型区的空穴泄露,增加QWs内的辐射复合率,降低其阈值电压与电阻,提升其电光转换效率与输出功率。A monotonic compositionally graded hole reservoir layer(MCG-HRL)and a symmetric compositionally graded hole blocking layer(SCG-HBL)structures are proposed to optimize the electro-optical conversion efficiency and output power of the deep ultraviolet laser diode(DUV-LD).Crosslight software is used to simulate the DUV-LD with infrastructure,rectangular HRL(R-HRL),MCG-HRL,and MCG-HRL structures.The simulation results indicate that the MCG-HRL and SCG-HBL effectively contribute to the increased hole concentration in the quantum wells(QWs),reduce hole leakage in the n-type region,increase radiation recombination rate in the QWs,reduce threshold voltage and resistance,and increase electro-optical conversion efficiency and output power of the DUV-LD.

关 键 词：光学器件 激光技术 深紫外激光二极管 ALGAN 空穴存储层 空穴阻挡层 

分 类 号：O472[理学—半导体物理]