磁控溅射等离子体阻抗影响因素研究  

Impedance of Magnetron Sputtering Plasma:A Experiment and Analysis Study

作　　者：王懿 李勇滔 李含雁 金炯 孙小孟[4] 张春雨 WANG Yi;LI Yongtao;LI Hanyan;JIN Jiong;SUN Xiaomeng;ZHANG Chunyu(School of Mechanical and Automotive Engineering,Guangxi University of Science and Technology,Liuzhou 545006,China;School of Automation,Guangxi University of Science and Technology,Liuzhou 545006,China;Zhejiang SWSAVC Photoelectric Technology Limited,Huzhou 313200,China;Institute of Microelectronics of the Chinese Academy of Sciences,Beijing 100029,China)

机构地区：[1]广西科技大学机械与汽车学院,柳州545006 [2]广西科技大学自动化学院,柳州545006 [3]浙江赛威科光电科技有限公司,湖州313200 [4]中国科学院微电子研究所,北京100029

出　　处：《真空科学与技术学报》2023年第6期513-519,共7页Chinese Journal of Vacuum Science and Technology

基　　金：国家自然科学基金项目(62041402,61474139);国家重点研发计划项目(2016YFF0100201)。

摘　　要：了解等离子体阻抗在磁控溅射放电过程中的变化规律,有利于调控电源和负载之间的阻抗匹配,达到最大化利用溅射功率,提高镀膜质量的目的。为了研究磁控溅射镀膜工艺过程中等离子体的阻抗特性的变化趋势,本文采用V-I probe测量等离子体阻抗大小、极板负偏压等参数,研究了气体流量和溅射功率对等离子体阻抗特性的影响。结果表明,在本文的实验条件下,等离子体始终呈现为容抗特性。当气体流量增大时,受氩气的电离率影响,等离子体阻抗实部R呈现先增大后减小的趋势,阻抗虚部X受到鞘层的影响呈现先减小后增大的趋势。当溅射功率增大时,等离子体阻抗实部R受欧姆加热的影响一直增大,阻抗虚部X受到负偏压和鞘层的影响逐渐减小。Understanding the change rule of plasma impedance in the process of magnetron sputtering discharge is conducive to regulating the impedance matching between power supply and load,so as to maximize the use of sputtering power and improve the coating quality.In order to study the changing trend of plasma impedance characteristics in the process of magnetron sputtering coating,V-I probe is used to measure the plasma impedance and the negative bias voltage of the electrode plate,and the effects of gas flow and sputtering power on the plasma impedance characteristics are studied.The results show that,under the experimental conditions in this paper,the plasma always presents capacitive reactance characteristics.When the gas flow rate increases,the real part R of the plasma impedance increases first and then decreases due to the ionization rate of argon,and the imaginary part X of the impedance decreases first and then increases due to the influence of secondary electrons and sheath.When the sputtering power increases,the influence of ohmic heating and random heating on the real part R of the plasma impedance increases all the time,while the influence of negative bias voltage and sheath on the imaginary part X of the impedance decreases all the time.

关 键 词：磁控溅射 等离子体阻抗 射频放电 放电参数 

分 类 号：O539[理学—等离子体物理]