基于复合势垒的AlGaN/GaN异质结材料的制备与性能研究  

Growth and Properties of AlGaN/GaN Heterojunction Material with Coupled Barrier

作　　者：彭大青[1,2,3] 李忠辉 蔡利康[1] 李传皓 杨乾坤[1,2,3] 张东国[1,2,3] 罗伟科 PENG Daqing;LI Zhonghui;CAI Likang;LI Chuanhao;YANG Qiankun;ZHANG Dongguo;LUO Weike(Nanjing Electronic Devices Institute,Nanjing 210016,China;Science and Technology on Monolithic Integrated Circuits and Modules Laboratory,Nanjing 210016,China;Key Laboratory of Carbon-based Electronics,China Electronics Technology Group Corporation,Nanjing 210016,China)

机构地区：[1]南京电子器件研究所,南京210016 [2]微波毫米波单片集成和模块电路重点实验室,南京210016 [3]中国电子科技集团有限公司碳基电子重点实验室,南京210016

出　　处：《人工晶体学报》2023年第5期746-752,共7页Journal of Synthetic Crystals

基　　金：江苏省重点研发计划(SBE2020020137)。

摘　　要：针对高线性氮化镓微波功率器件研制需求,设计并外延生长了复合势垒的Al_(0.26)Ga_(0.74)N/GaN/Al_(0.20)Ga_(0.80)N/GaN异质结构材料,通过理论计算和电容-电压(C-V)测试表明复合势垒材料存在两层二维电子气沟道。生长的复合势垒材料二维电子气迁移率达到1510 cm^(2)·V^(-1)·s^(-1),面密度达到9.7×10^(12)cm^(-2)。得益于双沟道效应,基于复合势垒材料研制的器件跨导存在两个峰,使得跨导明显展宽,达到3.0 V,是常规材料的1.5倍。复合势垒结构器件的跨导一阶导数与二阶导数具有更加优异的特性,表明其具有更高的谐波抑制能力,显示复合势垒AlGaN/GaN异质结构在高线性应用上的优势。A novel coupled barrier heterojunction structure(i.e.Al_(0.26)Ga_(0.74)N/GaN/Al_(0.20)Ga_(0.80)N/GaN)was proposed and prepared in this paper to improve transconductance linearity of GaN high electron mobility transistor.A double two-dimensional electron gas(2DEG)channel in the coupled barrier heterojunction structure is demonstrated by theoretically calculation and capacitance-voltage(C-V)measurement.2DEG mobility of 1510 cm^(2)·V^(-1)·s^(-1)and sheet density of 9.7×10^(12)cm^(-2)are obtained.Benefiting from the double channels,the transconductance profile of the device with coupled heterojunction barrier structure shows two peaks,and the voltage swing is 3.0 V,which is 1.5 times larger than that of normal structure.First-order and second-order derivative characteristics of transconductance indicate that the device of the coupled barrier structure has higher harmonic suppression capability.This study demonstrates a superiority of coupled barrier heterojunction in the area of high linearity application.

关 键 词：ALGAN/GAN异质结 复合势垒 金属有机物气相沉积 高线性 跨导 二维电子气 

分 类 号：TN386[电子电信—物理电子学] TN304.2